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S8GBU60-C PDF预览

S8GBU60-C

更新时间: 2024-10-29 01:04:27
品牌 Logo 应用领域
SECOS 二极管
页数 文件大小 规格书
2页 225K
描述
8.0Amp Glass Passivited Bridge Rectifiers

S8GBU60-C 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
二极管类型:BRIDGE RECTIFIER DIODEBase Number Matches:1

S8GBU60-C 数据手册

 浏览型号S8GBU60-C的Datasheet PDF文件第2页 
S8GBU20-C ~ S8GBU80-C  
Voltage 200V ~ 1000V  
8.0Amp Glass Passivited Bridge Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
GBU  
FEATURES  
Ideal for printed circuit board  
Reliable low cost construction utilizing  
molded plastic technique  
Plastic material has Underwriters Laboratory  
flammability classification 94V-0  
Mounting position: Any  
These are Halogen & Pb Free components  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
A
B
C
D
E
F
21.7  
18.2  
3.15  
17.5  
1.8  
0.9  
3.4  
5
22.3  
18.8  
3.55  
18.5  
2.2  
1.2  
3.8  
5.2  
I
J
1.8  
1.8  
0.4  
9.9  
5.2  
3.3  
2.2  
2.2  
0.6  
10.1  
5.8  
K
L
M
N
P
3.8  
G
H
3 × 45°  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Part Number  
Parameter  
Symbol  
Unit  
S8GBU20-C  
S8GBU40-C  
S8GBU60-C S8GBU80-C  
600 800  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
200  
400  
V
TC=110°C  
Average Rectified Output  
(with heat sink)  
8
Current @50HZ sine  
TA=25°C  
IO  
A
wave, R-load  
3.2  
(without heat sink)  
Peak Forward Surge Current @  
50HZ sine wave, 1 cycle, TA=25°C  
IFSM  
200  
A
Maximum Peak Forward Voltage3  
VFM  
IRRM  
1
5
V
Peak Reverse Current 2  
µA  
I2t Rating for Fusing @1mst8.3ms,  
TJ=25°C,Rating of per diode  
I2t  
166  
A2s  
Mounting Torque @ Recommend torque:5kg·cm  
Dielectric Strength1  
TOR  
Vdis  
8
2
Kgcm  
kV  
Typical Thermal Resistance (with heat sink)  
Typical Thermal Resistance(without heat sink)  
Typical Thermal Resistance(without heat sink)  
Operating and Storage temperature range  
R
θJC  
θJA  
5
°C/W  
°C/W  
°C/W  
°C  
R
23  
8
R
θJL  
TJ,TSTG  
150, -40~150  
Notes  
1. Terminals to caseAC 1 minute  
2. VRM=VRRM, Pulse measurement, Rating of per diode.  
3. IFM=8.0A, Pulse measurement, Rating of per diode  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
13-Jun-2012 Rev. A  
Page 1 of 2  

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