CCD area image sensor S7986-01, S7987-01
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
ꢀꢀ
Parameter
Symbol
Min.
Typ.
Fw × Sv
65
130
2.0
50
5
150
Max.
-
-
-
-
500
50
300
-
10
-
0
10
3
Unit
V
Saturation output voltage
Vsat
-
Vertical
Horizontal
CCD node sensitivity
30
60
1.5
-
-
-
-
Full well capacity
Fw
Sv
ke
-
µV/e
Dark current*5
(MPP mode)
Readout noise*6
25 °C
0 °C
-
e /pixel/s
DS
-
Nr
DR
PRNU
λ
e rms
Dynamic range (area scanning)*7
Photo response non-uniformity*8
Spectral response range
200
430
-
200 to 1100
-
%
nm
-
-
-
-
-
-
-
-
-
White spots
Black spots
-
-
-
-
Point defect*9
Blemish
-
Cluster defect*10
Column defect*11
0
-
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -50 °C, Operating frequency is 12 MHz.
*7: Dynamic range (DR) = Full well/Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
Fixed pattern noise (peak to peak)
Photo response non-uniformity (PRNU) (%) =
× 100
Signal
*9: White spots
-
Pixels whose dark current is higher than 1 ke after one-second integration at 0 °C
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of
the saturation charge)
*10: 2 to 9 contiguous defective pixels
*11: 10 or more contiguous defective pixels
ꢀꢀSpectral response (without window)*12
ꢀꢀSpectral transmittance characteristic
of window material
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
90
80
70
60
50
40
100
90
80
70
60
50
40
30
20
Back-thinned CCD
Sapphire
30
Front-illuminated CCD
(UV coated)
20
Front-illuminated CCD
10
0
10
0
200
400
600
800
1000
1200
100 200 300 400 500 600 700 800 900 1000
Wavelength (nm)
Wavelength (nm)
KMPDB0058EB
KMPDB0101EB
*14: Spectral response with sapphire is decreased according to the
spectral transmittance characteristic of window material.
3