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S71WS128NB0BFWAM2 PDF预览

S71WS128NB0BFWAM2

更新时间: 2023-01-03 05:24:22
品牌 Logo 应用领域
飞索 - SPANSION 静态存储器
页数 文件大小 规格书
13页 331K
描述
Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84

S71WS128NB0BFWAM2 数据手册

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S71WS-N  
Stacked Multi-Chip Product (MCP)  
1.8 Volt-only Simultaneous Read/Write,  
Burst-mode Flash Memory with CellularRAM  
Data Sheet  
Features  
„ Power supply voltage of 1.7 V to 1.95 V  
„ Burst Speed: 54 MHz, 66 MHz, 80 MHz  
„ Package  
– 8 x 11.6 mm, 9 x 12 mm  
„ Operating Temperature  
– Wireless, –25° C to +85° C  
General Description  
The S71WS-N Series is a product line of stacked Multi-Chip Product (MCP) packages and consists of the following items:  
„ One or more flash memory die (for the S71WS512N, two S29WS256N devices are used)  
„ CellularRAM Type 2 pSRAM  
The products covered by this document are listed in the table below. For details about their specifications, please refer to the  
individual constituent datasheet for further details.  
pSRAM  
Flash Density  
S29WS128N  
S29WS256N  
S29WS512N  
32 Mb  
64 Mb  
128 Mb  
S71WS128NB0  
S71WS128NC0  
S71WS256NC0  
S71WS512NC0  
S71WS256ND0  
S71WS512ND0  
For detailed specifications, please refer to the individual data sheets.  
Document  
Publication Identification Number (PID)  
S29WS-N  
S29WS-N_00  
CellularRAM_08  
Cellram_07  
32 M CellularRAM Type 2  
64 M CellularRAM Type 2  
128 M CellularRAM Type 2  
Cellram_07  
Publication Number S71WS-N_00  
Revision A  
Amendment 7  
Issue Date April 4, 2008  

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