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S71GL032NA0BHW0B2 PDF预览

S71GL032NA0BHW0B2

更新时间: 2024-01-17 06:04:20
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
12页 492K
描述
Memory Circuit, Flash+PSRAM, CMOS, PBGA56,

S71GL032NA0BHW0B2 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FBGA, BGA56,8X8,32Reach Compliance Code:unknown
风险等级:5.69最长访问时间:90 ns
JESD-30 代码:S-PBGA-B56内存集成电路类型:MEMORY CIRCUIT
混合内存类型:FLASH+PSRAM端子数量:56
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA56,8X8,32封装形状:SQUARE
封装形式:GRID ARRAY, FINE PITCH电源:3 V
认证状态:Not Qualified子类别:Other Memory ICs
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

S71GL032NA0BHW0B2 数据手册

 浏览型号S71GL032NA0BHW0B2的Datasheet PDF文件第3页浏览型号S71GL032NA0BHW0B2的Datasheet PDF文件第4页浏览型号S71GL032NA0BHW0B2的Datasheet PDF文件第5页浏览型号S71GL032NA0BHW0B2的Datasheet PDF文件第7页浏览型号S71GL032NA0BHW0B2的Datasheet PDF文件第8页浏览型号S71GL032NA0BHW0B2的Datasheet PDF文件第9页 
D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
3. Connection Diagram  
56-ball Fine-Pitch Ball Grid Array  
(Top View, Balls Facing Down)  
Legend  
A2  
A7  
A3  
LB#  
B3  
A4  
WP/ACC  
B4  
A5  
WE#  
B5  
A6  
A8  
A7  
A11  
B7  
B1  
B2  
B6  
B8  
A15  
C8  
Shared  
(Note 1)  
A3  
C1  
A6  
UB#  
C3  
RST#f  
C4  
CE2s  
C5  
A19  
C6  
A12  
C7  
C2  
A2  
A5  
A18  
D3  
RY/BY#  
A20  
A9  
A13  
D7  
A21  
D8  
Flash only  
RAM only  
D1  
D2  
D6  
A1  
A4  
A17  
E3  
A10  
E6  
A14  
E7  
RFU  
E8  
E1  
E2  
A0  
VSS  
F2  
DQ1  
F3  
DQ6  
F6  
RFU  
F7  
A16  
F8  
F1  
F4  
DQ3  
G4  
F5  
DQ4  
G5  
Reserved for  
Future Use  
CE1#f  
G1  
OE#  
G2  
DQ0  
H2  
DQ9  
G3  
DQ13  
G6  
DQ15  
G7  
RFU  
G8  
CE1#s  
DQ10  
H3  
VCCf  
H4  
VCCs  
H5  
DQ12  
H6  
DQ7  
H7  
VSS  
DQ8  
DQ2  
DQ11  
RFU  
DQ5  
DQ14  
Note:  
May be shared depending on density.  
MCP  
Flash-only Addresses  
Shared Addresses  
A19-A0  
S71GL032NA0  
S71GL064NB0  
S71GL064NA0  
A20  
A21  
A20-A0  
A21-A20  
A19-A0  
3.1  
Special Handling Instructions For FBGA Package  
Special handling is required for Flash Memory products in FBGA packages.  
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The  
package and/or data integrity may be compromised if the package body is exposed to temperatures above  
150C for prolonged periods of time.  
6
S71GL-N Based MCPs  
S71GL-N_00_07 May 8, 2012  

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