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S5MHE3/9AT PDF预览

S5MHE3/9AT

更新时间: 2024-11-18 22:56:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 97K
描述
DIODE GEN PURP 1KV 5A DO214AB

S5MHE3/9AT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.39
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.15 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1最高工作温度:150 °C
最大输出电流:5 A峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V最大反向恢复时间:2.5 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN处于峰值回流温度下的最长时间:30
Base Number Matches:1

S5MHE3/9AT 数据手册

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S5A, S5B, S5D, S5G, S5J, S5K, S5M  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Glass Passivated Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
SMC (DO-214AB)  
Cathode  
Anode  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
5.0 A  
MECHANICAL DATA  
Case: SMC (DO-214AB)  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,.....)  
IFSM  
100 A  
10 μA  
IR  
VF  
1.15 V  
TJ max.  
150 °C  
Package  
SMC (DO-214AB)  
Single  
Circuit configuration  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, and HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
S5A  
5A  
50  
S5B  
5B  
S5D  
5D  
S5G  
5G  
S5J  
5J  
S5K  
5K  
S5M UNIT  
Device marking code  
5M  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
5.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
35  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 75 °C  
50  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 15-Apr-2020  
Document Number: 88931  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

S5MHE3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
S5MHE3_A/I VISHAY

完全替代

Rectifier Diode, 1 Phase, 1 Element, 5A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

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