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S5MHE3_A/H PDF预览

S5MHE3_A/H

更新时间: 2024-11-21 22:56:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 97K
描述
DIODE GEN PURP 1KV 5A DO214AB

S5MHE3_A/H 数据手册

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S5A, S5B, S5D, S5G, S5J, S5K, S5M  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Glass Passivated Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
SMC (DO-214AB)  
Cathode  
Anode  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
5.0 A  
MECHANICAL DATA  
Case: SMC (DO-214AB)  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,.....)  
IFSM  
100 A  
10 μA  
IR  
VF  
1.15 V  
TJ max.  
150 °C  
Package  
SMC (DO-214AB)  
Single  
Circuit configuration  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, and HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
S5A  
5A  
50  
S5B  
5B  
S5D  
5D  
S5G  
5G  
S5J  
5J  
S5K  
5K  
S5M UNIT  
Device marking code  
5M  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
5.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
35  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 75 °C  
50  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 15-Apr-2020  
Document Number: 88931  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

S5MHE3_A/H 替代型号

型号 品牌 替代类型 描述 数据表
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