是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | LEAD FREE, 3-3E1A, 2 PIN | 针数: | 2 |
Reach Compliance Code: | unknown | 风险等级: | 5.39 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-XALF-W2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -40 °C |
最大输出电流: | 1 A | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 1000 V |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
S5566GTPA2 | TOSHIBA | DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode |
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S5566GTPB2 | TOSHIBA | DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode |
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S5566J | EIC | SILICON RECTIFIER DIODES |
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S5566J | TOSHIBA | GENERAL PURPOSE RECTIFIER APPLICATIONS |
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S5566JTPA1 | TOSHIBA | DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode |
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S5566JTPA3 | TOSHIBA | DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode |
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