S5566J

更新时间： 2024-09-30 04:06:51

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	42K
描述
SILICON RECTIFIER DIODES

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中文翻译

获取价格

技术参数
数据手册
替代型号

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S5566J 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.75
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

S5566J 数据手册

SILICON RECTIFIER DIODES

DO - 41

S5566B/G/J/N

PRV : 100 - 1000 Volts

Io : 1.0 Ampere

1.00 (25.4)

0.107 (2.7)

MIN.

0.080 (2.0)

FEATURES :

* High current capability

* High surge current capability

* High reliability

0.205 (5.2)

0.166 (4.2)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

1.00 (25.4)

0.034 (0.86)

MIN.

0.028 (0.71)

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.339 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

SYMBOL S5566B S5566G

S5566J

600

S5566N

1000

700

UNIT

V^RRM

V^RMS

VDC

100

400

280

400

420

Maximum DC Blocking Voltage

100

600

1000

Maximum Average Forward Current

Maximum Peak Forward Surge Current Single half sine wave

superimposed on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 1.0 A

Maximum Repetitive Peak Reverse Current

Junction Temperature Range

I^F(AV)

1.0

(50Hz)

(60Hz)

(50Hz)

(60Hz)

I^FSM

1.2

I^RRM

°C

- 40 to + 150

Storage Temperature Range

T^STG

Page 1 of 2

Rev. 01 : April 2, 2002

中文翻译

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S5566J 替代型号

型号	品牌	替代类型	描述	数据表
S5688J	TOSHIBA	功能相似	TOSHIBA Rectifier Silicon Diffused Type

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