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S5573

更新时间: 2024-11-25 04:06:51
品牌 Logo 应用领域
HAMAMATSU 光电二极管光电二极管
页数 文件大小 规格书
2页 143K
描述
Si PIN photodiode

S5573 数据手册

 浏览型号S5573的Datasheet PDF文件第2页 
P H O T O D I O D E  
Si PIN photodiode  
,
,
,
S7797 S5052 S8255 S5573  
φ3 mm lens plastic package  
These Si PIN photodiodes are molded into to a clear plastic package with a φ3 mm lens. To meet your application, various types are  
available with different time response characteristics.  
Features  
Applications  
Clear plastic package with φ3 mm lens  
High-speed response  
Laser diode monitor in optical disk drive (high-speed APC)  
Spatial light transmission  
S7797: 500 MHz Typ. (V  
S5052: 500 MHz Typ. (V  
S8255: 200 MHz Typ. (V  
R
R
R
=2.5 V)  
=5 V)  
=5 V)  
S5573: 80 MHz Typ. (VR=5 V)  
General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Active  
area size  
Effective  
active area  
Reverse  
voltage  
VR Max.  
(V)  
Power  
Operating  
dissipation temperature temperature  
Storage  
Package  
Type No.  
P
(mW)  
Topr  
(°C)  
Tstg  
(°C)  
(mm)  
(mm)  
(mm2)  
7.0  
S7797  
S5052  
S8255  
S5573  
Plastic package  
with lens  
20  
50  
-25 to +85 -40 to +100  
φ3.0  
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Photo sensitivity  
S
(A/W)  
Short  
circuit  
current  
Isc  
100 lx  
2856 K  
(µA)  
Cut-off  
frequency  
fc  
Spectral  
response sensitivity  
range wavelength  
Peak  
Temp.  
coefficient  
of ID  
Terminal  
Dark current  
ID  
capacitance  
Ct  
f=1 MHz  
NEP  
Type No.  
RL=50 Ω  
-3dB  
TCID  
λ
λp  
660 780 830  
nm nm nm  
λp  
(nA)  
(nm)  
(nm)  
760 0.52 0.48 0.51 0.48  
800 0.46 0.4 0.45 0.45  
Typ. Max. (times/°C) (MHz)  
(pF)  
6 *1  
4 *2  
(W/Hz1/2)  
3.4 × 10-15  
5.5 × 10-15  
3.4 × 10-15  
5.3 × 10-15  
1
2
2
2
S7797  
S5052  
0.01 *1 0.3 *1  
0.02 *2 0.3 *2  
500 *1  
500 *2  
200 *2  
80 *2  
*
*
*
*
320 to 1000  
2.8  
1.15  
S8255  
S5573  
4.0 0.01 *2 1 *2  
4.5 0.025 *2 1 *2  
320 to 1060 900 0.53 0.4 0.48 0.5  
3 *2  
*1: VR=2.5 V  
*2: VR=5 V  

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