5秒后页面跳转
S43120-BP PDF预览

S43120-BP

更新时间: 2024-01-12 08:33:42
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
1页 108K
描述
Rectifier Diode,

S43120-BP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.84JESD-609代码:e3
端子面层:Matte Tin (Sn)Base Number Matches:1

S43120-BP 数据手册

  
S/R4320  
thru  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
S/R43120  
Features  
Glass Passivated Die  
150 Amp Rectifier  
200 - 1200 Volts  
High Voltages Rating up to 1200 Volts  
High Surge Current Capabilities  
Standard Polarity: Stud is Cathode  
Reverse Polarity: Stud is Anode  
Maximum Ratings  
Operating Temperature: -40to +180℃  
Storage Temperature: -40to +180℃  
DO-8  
Maximum Thermal Resistance: 0.35/W Junction To Case  
Maximum  
Maximum DC  
MCC Part  
Number  
Recurrent  
Peak Reverse RMS Voltage  
Voltage  
Maximum  
Blocking  
Voltage  
S/R4320  
S/R4330  
S/R4340  
S/R4350  
S/R4360  
S/R4380  
S/R43100  
S/R43120  
200V  
300V  
400V  
500V  
600V  
800V  
1000V  
1200V  
140V  
210V  
280V  
350V  
420V  
560V  
700V  
840V  
200V  
300V  
400V  
500V  
600V  
800V  
1000V  
1200V  
Electrical Characteristics @ 25Unless Otherwise Specified  
Average Forward  
Current  
TC = 148℃  
IF(AV)  
150A  
half sine  
DIMENSIONS  
8.3ms, half sine  
Peak Forward Surge  
Current  
INCHES  
MIN MAX  
3/8’’-24UNF-2A  
MM  
IFSM  
2500A  
NOTE  
TJ = 180℃  
DIM  
A
MIN  
MAX  
3/8’’-24UNF-2A  
Maximum  
Instantaneous  
Forward Voltage  
I
FM = 200A;  
B
.610  
.660  
.835  
4.375  
.297  
.500  
.271  
--  
.640  
.740  
.843  
4.625  
.327  
.600  
.291  
.100  
1.380  
15.50  
16.76  
21.20  
111.13  
7.55  
12.70  
6.89  
--  
16.25  
VF  
1.10V  
TJ = 25℃  
C
D
E
18.80  
21.47  
117.47  
8.30  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
TJ = 25℃  
50µA  
5.0mA  
IR  
F
TJ = 150℃  
G
H
J
15.24  
7.39  
Maximum I2t for  
Fusing  
I2t  
26KA2s  
2.60  
K
--  
--  
35.05  
MM2  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
L
--  
16  
www.
mccsemi
.com  

与S43120-BP相关器件

型号 品牌 获取价格 描述 数据表
S43120E3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43120F MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43120TS MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43120TSE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43140 MICROSEMI

获取价格

Silicon Power Rectifier
S43140E3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 1400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43140FE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 1400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43140TS MICROSEMI

获取价格

暂无描述
S43140TSE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 1400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S4315 HAMAMATSU

获取价格

Avalanche Photodiode, TO-8, 6 PIN