Datasheet > S4315-01

S4315-01

更新时间： 2024-11-15 09:06:51

品牌	Logo	应用领域
HAMAMATSU		/
页数	文件大小	规格书
4页	144K
描述
Low bias operation, for 800 nm band

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技术参数
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S4315-01 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TO-8, 6 PIN	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.59
其他特性：	HIGH SENSITIVITY	配置：	SINGLE
红外线范围：	YES	功能数量：	1
最高工作温度：	85 °C	最低工作温度：	-20 °C
光电设备类型：	AVALANCHE PHOTODIODE	峰值波长：	800 nm
形状：	ROUND	尺寸：	0.5 mm
Base Number Matches：	1

S4315-01 数据手册

P H O T O D I O D E

Si APD

S2381 to S2385 S5139 S8611 S3884, S4315 series

Low bias operation, for 800 nm band

Features

Applications

Stable operation at low bias

High-speed response

Spatial light transmission

Rangefinder

High sensitivity and low noise

ꢀꢀ General ratings / Absolute maximum ratings

Absolute maximum ratings

Dimensional

outline/

Active area *²

Effective active

area

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Package

size

Window

material *¹

(mm)

φ0.2

(mm²)

0.03

(°C)

S2381

S2382

S5139

S8611

S2383

S2383-10 *³

S3884

S2384

S2385

ꢀ/K

ꢀ/L

φ0.5

0.19

TO-18

-20 to +85

-55 to +125

ꢀ/K

φ1.0

0.78

ꢀ/K

φ1.5

φ3.0

φ5.0

1.77

7.0

19.6

TO-5

TO-8

ꢀꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Breakdown

voltage

VBR

Photo

sensitivity efficiency

Quantum

Excess

Peak

Dark

Cut-off *

Spectral

response

range

Temp.

Terminal

Noise

figure *⁴

Gain

λ=800 nm

sensitivity

wavelength

λp

coefficient current *⁴frequency

capacitance

M=1

RL=50

I =100 µA

Type No.

Ω

λ=800 nm λ=800 nm

λ=800 nm

Typ. Max.

(V) (V)

Typ. Max.

(V/°C) (nA) (nA) (MHz)

(nm)

800

(A/W)

0.5

(%)

(pF)

1.5

S2381

S2382

S5139

S8611

S2383

S2383-10 *³

S3884

S2384

S2385

0.05 0.5

1000

0.1

900

100

400 to 1000

150 200

0.65

0.3

0.2

600

0.5

400

120

*1: Window material K: borosilicate glass, L: lens type borosilicate glass

*2: Active area in which a typical gain can be obtained

*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area

*4: Measured under conditions that the device is operated at the gain listed in the specification table

Note) The following different breakdown voltage ranges are available.

S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)

S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)

12 3 4

中文翻译

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与S4315-01相关器件

型号	品牌	获取价格	描述	数据表
S4315-02	HAMAMATSU	获取价格	Avalanche Photodiode, TO-8, 6 PIN
S4315-04	HAMAMATSU	获取价格	Avalanche Photodiode, TO-8, 6 PIN
S43160	MICROSEMI	获取价格	Silicon Power Rectifier
S43160E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 150A, 1600V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43160F	MICROSEMI	获取价格	暂无描述
S43160FE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 150A, 1600V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S43160TS	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 150A, 1600V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
S4317D	Narda-ATM	获取价格	0.5-18 GHz PIN DIODE SWITCHES
S43-1812	ETC	获取价格	HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
S431CA	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 6A, 150V V(RRM), Silicon, 431, 3 PIN

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