Datasheet > S40D60PT

S40D60PT

更新时间： 2024-11-03 01:25:23

品牌	Logo	应用领域
CTC		/
页数	文件大小	规格书
3页	274K
描述
Schottky Barrier Rectifier

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S40D60PT 数据手册

S40D60PT

Schottky Barrier Rectifier

FEATURES

‧ Low power loss, high efficiency

‧ Low forward voltage drop

‧ High forward surge capability

‧ High frequency operation

‧ Excellent high temperature stability

‧ Trench MOS Schottky technology

‧ Suffix “H” indicates halogen free parts

MECHANICAL DATA

‧ Case: TO-3P

‧ Terminals: Pure tin plated, lead free

‧ Polarity: As marked

‧ Weight: Approximated 1.86 grams

Primary Characteristic

I_O

2X20A

60V

V_RRM

I_FSM

400A

0.5V

V_F@20A, T_J=125°C

T_Jmax

150°C

Maximum Ratings Ta=25°C unless otherwise specified

Characteristics

Maximum Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Blocking Voltage

RMS Reverse Voltage

Symbol

Value

Unit

V_RRM

V_RWM

V_DC

V_RMS

Forward Voltage Drop

I_F=5A, T_J=25°C

I_F=20A, T_J=25°C

I_F=5A, T_J=125°C

I_F=20A, T_J=125°C

0.38

0.58

0.3

V_F

0.5

Maximum Reverse Current at Rated V_RRM

T_J=25°C

T_J=125°C

Maximum Average Forward Rectified Current

Total device

Per diode

I_R

0.2

I_O

Peak Forward Surge Current,

8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

400

Operating Temperature Range

T_J

-65 to +150

°C

Storage Temperature Range

T_STG

Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle

V0.0 2012-06

http://ctc-semicon.com

P1/3

12 3

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