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S3MHE3_A/I PDF预览

S3MHE3_A/I

更新时间: 2024-11-13 20:07:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 91K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

S3MHE3_A/I 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:12 weeks
风险等级:1.19其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.15 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
参考标准:AEC-Q101最大重复峰值反向电压:1000 V
最大反向电流:10 µA最大反向恢复时间:2.5 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

S3MHE3_A/I 数据手册

 浏览型号S3MHE3_A/I的Datasheet PDF文件第2页浏览型号S3MHE3_A/I的Datasheet PDF文件第3页浏览型号S3MHE3_A/I的Datasheet PDF文件第4页 
S3A, S3B, S3D, S3G, S3J, S3K, S3M  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low forward voltage drop  
• Low leakage current  
Available  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
SMC (DO-214AB)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
Case: SMC (DO-214AB)  
IFSM  
IR  
100 A  
10 μA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified  
VF  
1.15 V  
TJ max.  
Package  
Diode variations  
150 °C  
SMC (DO-214AB)  
Single  
(“_X” denotes revision code e.g. A, B,.....)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S3A  
S3B  
SB  
S3D  
SD  
S3G  
SG  
S3J  
SJ  
S3K  
SK  
S3M UNIT  
Device marking code  
SA  
SM  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
Maximum DC blocking voltage  
VDC  
100  
400  
3.0  
1000  
V
A
Maximum average forward rectified current at TL = 103 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 21-Jul-17  
Document Number: 88713  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

S3MHE3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
S3MHE3/9AT VISHAY

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3A, 1000V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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