Datasheet > S380Y_18

S380Y_18

更新时间： 2024-11-08 02:52:19

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	716K
描述
Silicon Standard Recovery Diode

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中文翻译

获取价格

数据手册

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S380Y_18 数据手册

S380Y thru S380ZR

V_RRM= 1600 V - 2000 V

I_F= 380 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 1600 V to 2000 V V_RRM

DO-9 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

Stud Stud

(R)

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

S380Y (R)

S380Z (R)

Parameter

Symbol

Unit

V_RRM

V_RMS

V_DC

I_F

1600

1131

1600

380

2000

1414

2000

380

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

T_C≤ 100 °C

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

I_F,SM

T_C= 25 °C, t_p= 8.3 ms

6335

T_j

-55 to 150

Operating temperature

Storage temperature

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

S380Y (R)

S380Z (R)

Parameter

Symbol

Unit

V_F

I_R

I_F= 380 A, T_j= 25 °C

V_R= 1600 V, T_j= 25 °C

V_R= 1600 V, T_j= 175 °C

1.2

Diode forward voltage

Reverse current

μA

Thermal characteristics

Thermal resistance, junction -

case

R_thJC

0.16

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/s380y.pdf

12 3

中文翻译

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与S380Y_18相关器件

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