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S34DF16B0F

更新时间: 2024-11-28 18:22:35
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
1页 70K
描述
Silicon Controlled Rectifier, 550A I(T)RMS, 225000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

S34DF16B0F 数据手册

  

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Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
S34DFH10B0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
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Silicon Controlled Rectifier, 550A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A
S34DFH12B0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A
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Silicon Controlled Rectifier, 550A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209A
S34DFH16B0 INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209A
S34DFH16B0F INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209A
S34DG2A0 INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele
S34DG4A0 INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele
S34DG4B0 INFINEON

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Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele