5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| S34DFH16B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209A |
|
| S34DG2A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele |
|
| S34DG4A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
|
| S34DG4B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
|
| S34DG6A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele |
|
| S34DG6B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele |
|
| S34DG8A0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 350000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele |
|
| S34DGF2A0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele |
|
| S34DGF2B0F | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele |
|
| S34DGF4B0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 550A I(T)RMS, 280000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
