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S320J_16 PDF预览

S320J_16

更新时间: 2024-10-29 01:11:43
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描述
Silicon Standard Recovery Diode

S320J_16 数据手册

 浏览型号S320J_16的Datasheet PDF文件第2页浏览型号S320J_16的Datasheet PDF文件第3页 
S320J thru S320QR  
VRRM = 600 V - 1200 V  
IF = 320 A  
Silicon Standard  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 600 V to 1200 V VRRM  
DO-9 Package  
• Not ESD Sensitive  
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
S320M (R) S320Q (R)  
Parameter  
Symbol  
S320J (R)  
S320K (R)  
Unit  
VRRM  
VRMS  
VDC  
IF  
1000  
707  
1200  
848  
Repetitive peak reverse voltage  
RMS reverse voltage  
600  
420  
600  
320  
800  
566  
800  
320  
V
V
V
A
1000  
320  
1200  
320  
DC blocking voltage  
TC ≤ 100 °C  
Continuous forward current  
Surge non-repetitive forward  
current, Half Sine Wave  
IF,SM  
TC = 25 °C, tp = 8.3 ms  
4700  
4700  
4700  
4700  
A
Tj  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
‐55 to 150  
‐55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
S320M (R) S320Q (R)  
Parameter  
Symbol  
S320J (R)  
S320K (R)  
Unit  
VF  
IR  
IF = 300 A, Tj = 25 °C  
VR = 600 V, Tj = 25 °C  
VR = 600 V, Tj = 175 °C  
1.2  
10  
12  
1.2  
10  
12  
V
Diode forward voltage  
Reverse current  
1.2  
10  
12  
1.2  
10  
12  
μA  
mA  
Thermal characteristics  
Thermal resistance, junction -  
case  
RthJC  
0.16  
0.16  
0.16  
0.16  
°C/W  
1
Feb 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/  

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