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S2ABF PDF预览

S2ABF

更新时间: 2024-10-30 01:25:27
品牌 Logo 应用领域
海德 - HDSEMI /
页数 文件大小 规格书
4页 1360K
描述
SMBF Plastic-Encapsulate Diodes

S2ABF 数据手册

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S2ABF THRU S2MBF  
HD BF60  
SMBF Plastic-Encapsulate Diodes  
Features  
I  
2A  
50V-1000V  
High surge current capability  
o
SMBF  
VRRM  
Glass passivated chip  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
S2ABF-S2MBF : S2AB-S2MB  
S2  
ABF BBF DBF GBF JBF KBF MBF  
Symbol  
Unit  
Item  
Test Conditions  
VRRM  
V
50  
100 200 400 600 800 1000  
Repetitive Peak Reverse Voltage  
35  
70 140 280 420 560 700  
V
V
RMS  
MaximumRMS Voltage  
IF(AV)  
A
A
2.0  
50  
60HZ Half-sine wave, Resistance  
load, TL =100  
Average Forward Current  
60Hz Half-sine wave ,1 cycle ,  
Ta =25℃  
IFSM  
Surge(Non-repetitive)Forward  
Current  
TJ  
-55~+150  
Junction Temperature  
Storage Temperature  
TSTG  
-55 ~ +150  
Electrical Characteristics (T =25Unless otherwise specified  
a
S2  
Item  
Symbol  
Unit  
V
Test Condition  
ABF BBF DBF GBF JBF KBF MBF  
VF  
IF =2.0A  
1.1  
Peak Forward Voltage  
Peak Reverse Current  
IRRM1  
IRRM2  
T =25  
5.0  
a
μA  
VRM=VRRM  
T =125℃  
a
125  
531)  
161)  
Rθ  
Between junction and ambient  
Between junction and terminal  
J-A  
Thermal  
Resistance(Typical)  
/W  
Rθ  
J-L  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper  
pad areas  
1
H
igh Diode Semiconductor  

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