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S29CD016J0PQAI133 PDF预览

S29CD016J0PQAI133

更新时间： 2024-02-07 17:53:57
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路闪存
页数 文件大小 规格书
81页 932K
描述
Flash, 512KX32, 54ns, PQFP80, PLASTIC, MO-108CB-1, QFP-80

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S29CD016J0PQAI133 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：QFP-80Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.04最长访问时间：54 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PQFP-G80
JESD-609代码：e0长度：20 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：32湿度敏感等级：3
功能数量：1部门数/规模：16,30
端子数量：80字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX32封装主体材料：PLASTIC/EPOXY
封装代码：QFP封装等效代码：QFP80,.7X.9,32
封装形状：RECTANGULAR封装形式：FLATPACK
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：1.8/2.6,2.6 V编程电压：2.7 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：3.35 mm部门规模：2K,16K
最大待机电流：0.00006 A子类别：Flash Memories
最大压摆率：0.09 mA最大供电电压 (Vsup)：2.75 V
最小供电电压 (Vsup)：2.5 V标称供电电压 (Vsup)：2.6 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.8 mm
端子位置：QUAD处于峰值回流温度下的最长时间：30
切换位：YES类型：NOR TYPE
宽度：14 mmBase Number Matches：1

S29CD016J0PQAI133 数据手册

 浏览型号S29CD016J0PQAI133的Datasheet PDF文件第1页浏览型号S29CD016J0PQAI133的Datasheet PDF文件第2页浏览型号S29CD016J0PQAI133的Datasheet PDF文件第4页浏览型号S29CD016J0PQAI133的Datasheet PDF文件第5页浏览型号S29CD016J0PQAI133的Datasheet PDF文件第6页浏览型号S29CD016J0PQAI133的Datasheet PDF文件第7页 
S29CD-J and S29CL-J Flash Family  
S29CD032J, S29CD016J, S29CL032J, S29CL016J  
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only  
Simultaneous Read/Write, Dual Boot, Burst Mode  
Flash Memory with VersatileI/O™  
Data Sheet  
General Description  
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process  
technology. These burst-mode Flash devices are capable of performing simultaneous read and write  
operations with zero latency on two separate banks, using separate data and address pins. These products  
can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single VCC of 2.5V to 2.75V (S29CD-J) or  
3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.  
Distinctive Characteristics  
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/  
Supports Common Flash Interface (CFI)  
Extended Temperature range  
erase  
110 nm Floating Gate Technology  
Simultaneous Read/Write operation with zero latency  
x32 Data Bus  
Persistent and Password methods of Advanced Sector  
Protection  
Unlock Bypass program command to reduce programming  
time  
Dual Boot Sector Configuration (top and bottom)  
Flexible Sector Architecture  
ACC input pin to reduce factory programming time  
Data Polling bits indicate program and erase operation  
– CD016J and CL016J: Eight 2k Double word, Thirty 16k Double  
word, and Eight 2k Double Word sectors  
completion  
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k Double  
Word, and Eight 2k Double Word sectors  
Hardware (WP#) protection of two outermost sectors in the  
large bank  
VersatileI/O™ control (1.65V to 3.6V)  
Ready/Busy (RY/BY#) output indicates data available to  
Programmable Burst Interface  
system  
– Linear for 2, 4, and 8 double word burst with wrap around  
Suspend and Resume commands for Program and Erase  
Operation  
Secured Silicon Sector that can be either factory or customer  
locked  
Offered Packages  
20 year data retention (typical)  
– 80-pin PQFP  
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)  
– Pb-free package option available  
– Known Good Die  
Cycling Endurance: 1 million write cycles per sector (typical)  
Command set compatible with JEDEC (JC42.4) standard  
Performance Characteristics  
Read Access Times  
Current Consumption (Max values)  
75  
Continuous Burst Read @ 75 MHz  
90 mA  
50 mA  
50 mA  
60 µA  
Speed Option (MHz)  
66  
56  
40  
(32 Mb only)  
Program  
Max Asynch. Access Time, ns (t  
)
54  
8
54  
8
54  
8
54  
8
ACC  
Erase  
Max Synch. Burst Access, ns (t  
)
BACC  
Standby Mode  
Min Initial Clock Delay (clock cycles)  
Max CE# Access Time, ns (t  
5
5
5
4
)
54  
20  
54  
20  
54  
20  
54  
20  
CE  
Typical Program and Erase Times  
Max OE# Access time, ns (t  
)
OE  
Double Word Programming  
Sector Erase  
18 µs  
1.0 s  
Notice for the 32Mb S29CD-J and S29CL-J devices only:  
Please refer to the application note “Recommended Mode of Operation for Spansion® 110 nm S29CD032J/S29CL032J Flash  
Memory” publication number S29CD-CL032J_Recommend_AN for programming best practices.  
Publication Number S29CD-J_CL-J_00  
Revision B  
Amendment 7  
Issue Date October 11, 2012  
1234567...81

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S29CD016J0PQAM013 SPANSION

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S29CD016J0PQAM100 SPANSION

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S29CD016J0PQAM110 SPANSION

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 		Flash, 512KX32, 54ns, PQFP80, PLASTIC, MO-108CB-1, QFP-80
S29CD016J0PQAM113 CYPRESS

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 		Flash, 512KX32, 54ns, PQFP80, QFP-80
S29CD016J0PQAM113 SPANSION

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 		Flash, 512KX32, 54ns, PQFP80, PLASTIC, MO-108CB-1, QFP-80

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