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S29CD016G0JDEI004

更新时间： 2024-11-07 15:50:15
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
15页 437K
描述
Flash, 512KX32, 67ns, 7.44 X 4.46 MM, DIE-76

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S29CD016G0JDEI004 技术参数

生命周期：Obsolete零件包装代码：DIE
包装说明：7.44 X 4.46 MM, DIE-76针数：76
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.24
最长访问时间：67 ns其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块：BOTTOM/TOPJESD-30 代码：R-XUUC-N76
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：32功能数量：1
端子数量：76字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX32封装主体材料：UNSPECIFIED
封装代码：DIE封装形状：RECTANGULAR
封装形式：UNCASED CHIP并行/串行：PARALLEL
编程电压：2.7 V认证状态：Not Qualified
最大供电电压 (Vsup)：2.75 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：2.6 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：NO LEAD端子位置：UPPER
类型：NOR TYPEBase Number Matches：1

S29CD016G0JDEI004 数据手册

 浏览型号S29CD016G0JDEI004的Datasheet PDF文件第2页浏览型号S29CD016G0JDEI004的Datasheet PDF文件第3页浏览型号S29CD016G0JDEI004的Datasheet PDF文件第4页浏览型号S29CD016G0JDEI004的Datasheet PDF文件第5页浏览型号S29CD016G0JDEI004的Datasheet PDF文件第6页浏览型号S29CD016G0JDEI004的Datasheet PDF文件第7页 
S29CD016G Known Good Die  
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only  
Burst Mode, Dual Boot, Simultaneous Read/Write  
Flash Memory  
Data Sheet Supplement  
Distinctive Characteristics  
„ Versatile I/O™ control  
Architecture Advantages  
— Device generates data output voltages and tolerates  
data input voltages as determined by the voltage on  
the VIO pin  
„ Simultaneous Read/Write operations  
— Data can be continuously read from the 75% bank  
while executing erase/program functions in the 25%  
bank  
— Zero latency between read and write operations  
— Two bank architecture: 75%/25%  
— 1.65 V to 2.75 V compatible I/O signals  
— 3.6 V tolerant I/O signals  
Software Features  
„ Persistent Sector Protection  
„ User-Defined x32 Data Bus  
„ Dual Boot Block  
— A command sector protection method to lock  
combinations of individual sectors and sector groups  
to prevent program or erase operations within that  
sector (requires only VCC levels)  
— Top and bottom boot in the same device  
„ Flexible sector architecture  
— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes  
sectors  
„ Password Sector Protection  
„ Manufactured on 0.17 µm process technology  
„ SecSi (Secured Silicon) Sector (256 Bytes)  
— A sophisticated sector protection method to lock  
combinations of individual sectors and sector groups  
to prevent program or erase operations within that  
sector using a user-definable 64-bit password  
— Factory locked and identifiable: 16 bytes for secure,  
random factory Electronic Serial Number; remainder  
may be customer data programmed by Spansion  
— Customer lockable: Can be read, programmed or  
erased just like other sectors. Once locked, data  
cannot be changed  
„ Supports Common Flash Interface (CFI)  
„ Unlock Bypass Program Command  
— Reduces overall programming time when issuing  
multiple program command sequences  
„ Programmable Burst interface  
„ Data# Polling and toggle bits  
— Interface to any high performance processor  
— Modes of Burst Read Operation:  
— Linear Burst: 4 double words and 8 double words  
with wrap around  
— Provides a software method of detecting program or  
erase operation completion  
Hardware Features  
„ Program Suspend/Resume & Erase Suspend/  
„ Single power supply operation  
— Optimized for 2.5 to 2.75 Volt read, erase, and  
program operations  
Resume  
— Suspends program or erase operations to allow  
reading, programming, or erasing in same bank  
„ Compatibility with JEDEC standards (JC42.4)  
— Software compatible with single-power supply Flash  
— Backward-compatible with Spansion Am29LV and  
Am29F, and Fujitsu MBM29LV and MBM29F flash  
memories  
„ Hardware Reset (RESET#), Ready/Busy#  
(RY/BY#), and Write Protect (WP#) inputs  
„ ACC input  
— Accelerates programming time for higher throughput  
during system production  
Performance Characteristics  
„ High performance read access  
„ Quality and reliability levels equivalent to  
standard packaged components  
— Initial/random access times as fast as 64 ns  
— Burst access time as fast as 10 ns  
„ Ultra low power consumption  
— Burst Mode Read: 90 mA @ 56 MHz max  
— Program/Erase: 50 mA max  
— Standby mode: CMOS: 150 µA max  
„ 1 million write cycles per sector typical  
„ 20 year data retention typical  
Publication Number S29CD016G_KGD Revision A Amendment 1 Issue Date October 21, 2005  
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