Datasheet > S2551_15

S2551_15

更新时间： 2024-11-15 01:24:35

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HAMAMATSU		/
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描述
Si photodiode

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S2551_15 数据手册

Si photodiode

S2551

For visible to infrared precision photometry

S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry.

Features

Applications

Long, narrow active area: 1.2 × 29.1 mm

High sensitivity

Analytical instruments

Optical measurement equipment

Low capacitance

Absolute maximum ratings

Parameter

Reverse voltage

Symbol

V Max.

Value

Unit

Operating temperature

Storage temperature

Topr

Tstg

-20 to +60

-20 to +80

°C

Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings

is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute

maximum ratings.

Electrical and optical characteristics (Ta=25 °C)

Parameter

Spectral response range

Peak sensitivity wavelength

Symbol

λp

Condition

Min.

Typ.

340 to 1060

920

Max.

Unit

A/W

μA

times/°C

μs

λ=λp

0.6

0.37

1.15

1.4

350

Photo sensitivity

λ=663 nm

100 lx

VR=10 mV

Short circuit current

Dark current

Temperature coefﬁcient of ID

Rise time

Terminal capacitance

Shunt resistance

Noise equivalent power

Isc

TCID

Rsh

NEP

VR=0 V, RL=1 kΩ

VR=0 V, f=10 kHz

VR=10 mV

0.01

0.03

GΩ

VR=0 V,

3.9 × 10^-14

W/Hz^1/2

www.hamamatsu.com

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