Datasheet > S20D100A

S20D100A

更新时间： 2024-11-30 01:23:07

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	922K
描述
20.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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中文翻译

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数据手册

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S20D100A 数据手册

S20D35A thru S20D200A

Pb Free Plating Product

20.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

TO-3PN/TO-3PB

Features

ꢀ Standard MBR matured technology with high reliablity

ꢀ Low forward voltage drop

ꢀ High current capability

Bottom Side Metal Heat Sink

ꢀ Low reverse leakage current

ꢀ High surge current capability

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

ꢀ Case: Heatsink TO-3PN/TO-3PB

ꢀ Epoxy: UL 94V-0 rate flame retardant

ꢀ

method 208

Terminals: Solderable per MIL-STD-202

ꢀ Polarity: As marked on diode body

ꢀ Mounting position: Any

ꢀ Weight: 6.5 gram approximately

Case

Series

Doubler

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "S"

Negative

Positive

Suffix "C"

Suffix "A"

Suffix "D"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

S20D S20D S20D S20D S20D S20D S20D S20D

PARAMETER

SYMBOL

UNIT

90A

35A

45A

50A

60A

100A 150A 200A

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated V_R, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

150

Peak repetitive reverse surge Current (Note 1)

1.0

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=10A, T_J=25℃

0.80

0.70

0.95

0.85

0.75

0.95

0.85

0.95

0.92

1.02

0.98

I_F=10A, T_J=125℃

V_F

0.57

0.84

0.72

I_F=20A, T_J=25℃

I_F=20A, T_J=125℃

0.1

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

Voltage rate of change,(Rated V_R)

Typical thermal resistance

10,000

dV/dt

R_θJC

T_J

V/μs

℃

Operating junction temperature range

Storage temperature range

- 55 to +150

℃

T_STG

Note 1: 2.0μs Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle

Rev.07C

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