Datasheet > S1M-E3-61T

S1M-E3-61T

更新时间： 2024-11-29 12:27:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	83K
描述
Surface Mount Glass Passivated Rectifier

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中文翻译

获取价格

数据手册

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S1M-E3-61T 数据手册

S1A thru S1M

Vishay General Semiconductor

www.vishay.com

Surface Mount Glass Passivated Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive, and telecommunication.

I_F(AV)

1.0 A

V_RRM

I_FSM

E_AS

50 V to 1000 V

40 A, 30 A

5 mJ

MECHANICAL DATA

Case: DO-214AC (SMA)

I_R

1.0 μA, 5.0 μA

1.1 V

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

V_F

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL S1A

S1B

S1D

S1G

S1J

S1K

S1M UNIT

Device marking code

Maximum recurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

Maximum average forward rectified current (fig. 1)

100

1000

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Non-repetitive peak reverse avalanche energy

at 25 °C, I_AS= 1 A, L = 10 mH

E_AS

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Revision: 11-Dec-12

Document Number: 88711

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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