S1A-N-Q1 THRU S1M-N-Q1
1.0A Surface Mount General Purpos
Rectifiers - 50V-1000V
Package outline
Features
• Glass passivated chip junction
• Ideal for automated placement
• Very tiny plastic SMD package.
• High current capability
• High surge capability
0.071(1.80)
0.063(1.60)
• Lead free parts meet RoHS requirments
•
Compliant to Halogen-free
Suffix "-Q1" for AEC-Q101
•
0.039(1.00)
0.031(0.80)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.108(2.75)
0.096(2.45)
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
o
Maximum ratings (AT TA=25 C unless otherwise noted)
S1B-N-Q1 S1D-N-Q1 S1G-N-Q1 S1J-N-Q1 S1K-N-Q1
SYMBOLS S1A-N-Q1
S1M-N-Q1 UNIT
PARAMETER
VRRM
50
Maximum repetitive peak reverse voltage
100
600
420
600
800
560
800
200
140
200
400
280
400
1.0
15
1000
V
V
V
VRMS
Maximum RMS voltage
35
50
700
70
VR
Maximum continuous reverse voltage
100
1000
A
A
Maximum average forward rectified current
IO
Peak forward surge current 8.3ms
IFSM
single half sine-wave(JEDEC method)
Typical junction capacitance (1)
5.0
pF
°C
°C
CJ
-55 to +150
-65 to +150
TJ
Operating junction temperature range
Storage temperature range
TSTG
o
Electrical characteristics (AT TA=25 C unless otherwise noted)
S1B-N-Q1 S1D-N-Q1 S1G-N-Q1 S1J-N-Q1 S1K-N-Q1
PARAMETER
SYMBOLS S1A-N-Q1
S1M-N-Q1
UNIT
Maximum instantaneous forward voltage
VF
1.1
V
at IF=1.0A
Maximum reverse leakage current TJ =25°C
5.0
50
uA
uA
IR
at rated VR
TJ =125°C
Thermal characteristics
S1B-N-Q1 S1D-N-Q1 S1G-N-Q1 S1J-N-Q1 S1K-N-Q1
SYMBOLS S1A-N-Q1
S1M-N-Q1 UNIT
°C/W
PARAMETER
Typical thermal resistance junction to ambient (2)
RθJA
55
Notes 1: Measured at 1MHz and applied reverse voltage of 4.0V D.C
2: Mounted on FR-4 PCB copper, minimum recommended pad layout
http://www.anbonsemi.com
Document ID
Issued Date
Revised Date
Revision
Page.
TEL:+86-755-23776891
AS-1010032
2018/03/08
2022/01/20
C
3
Page 1
FAX:+86-755-81482182