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S1J-N-Q1 PDF预览

S1J-N-Q1

更新时间: 2024-11-09 18:06:59
品牌 Logo 应用领域
安邦 - ANBON /
页数 文件大小 规格书
3页 942K
描述
SOD-323

S1J-N-Q1 数据手册

 浏览型号S1J-N-Q1的Datasheet PDF文件第2页浏览型号S1J-N-Q1的Datasheet PDF文件第3页 
S1A-N-Q1 THRU S1M-N-Q1  
1.0A Surface Mount General Purpos  
Rectifiers - 50V-1000V  
Package outline  
Features  
Glass passivated chip junction  
Ideal for automated placement  
Very tiny plastic SMD package.  
High current capability  
High surge capability  
0.071(1.80)  
0.063(1.60)  
Lead free parts meet RoHS requirments  
Compliant to Halogen-free  
Suffix "-Q1" for AEC-Q101  
0.039(1.00)  
0.031(0.80)  
Mechanical data  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, SOD-323  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
0.108(2.75)  
0.096(2.45)  
Polarity : Indicated by cathode band  
Dimensions in inches and (millimeters)  
Mounting Position : Any  
o
Maximum ratings (AT TA=25 C unless otherwise noted)  
S1B-N-Q1 S1D-N-Q1 S1G-N-Q1 S1J-N-Q1 S1K-N-Q1  
SYMBOLS S1A-N-Q1  
S1M-N-Q1 UNIT  
PARAMETER  
VRRM  
50  
Maximum repetitive peak reverse voltage  
100  
600  
420  
600  
800  
560  
800  
200  
140  
200  
400  
280  
400  
1.0  
15  
1000  
V
V
V
VRMS  
Maximum RMS voltage  
35  
50  
700  
70  
VR  
Maximum continuous reverse voltage  
100  
1000  
A
A
Maximum average forward rectified current  
IO  
Peak forward surge current 8.3ms  
IFSM  
single half sine-wave(JEDEC method)  
Typical junction capacitance (1)  
5.0  
pF  
°C  
°C  
CJ  
-55 to +150  
-65 to +150  
TJ  
Operating junction temperature range  
Storage temperature range  
TSTG  
o
Electrical characteristics (AT TA=25 C unless otherwise noted)  
S1B-N-Q1 S1D-N-Q1 S1G-N-Q1 S1J-N-Q1 S1K-N-Q1  
PARAMETER  
SYMBOLS S1A-N-Q1  
S1M-N-Q1  
UNIT  
Maximum instantaneous forward voltage  
VF  
1.1  
V
at IF=1.0A  
Maximum reverse leakage current TJ =25°C  
5.0  
50  
uA  
uA  
IR  
at rated VR  
TJ =125°C  
Thermal characteristics  
S1B-N-Q1 S1D-N-Q1 S1G-N-Q1 S1J-N-Q1 S1K-N-Q1  
SYMBOLS S1A-N-Q1  
S1M-N-Q1 UNIT  
°C/W  
PARAMETER  
Typical thermal resistance junction to ambient (2)  
RθJA  
55  
Notes 1: Measured at 1MHz and applied reverse voltage of 4.0V D.C  
2: Mounted on FR-4 PCB copper, minimum recommended pad layout  
http://www.anbonsemi.com  
Document ID  
Issued Date  
Revised Date  
Revision  
Page.  
TEL:+86-755-23776891  
AS-1010032  
2018/03/08  
2022/01/20  
C
3
Page 1  
FAX:+86-755-81482182  

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