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S1FLJ-GS08 PDF预览

S1FLJ-GS08

更新时间: 2024-11-29 14:44:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
7页 110K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

S1FLJ-GS08 技术参数

生命周期:Active包装说明:R-PDSO-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.15
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-219AB
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:22 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:600 V最大反向恢复时间:1.8 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUALBase Number Matches:1

S1FLJ-GS08 数据手册

 浏览型号S1FLJ-GS08的Datasheet PDF文件第2页浏览型号S1FLJ-GS08的Datasheet PDF文件第3页浏览型号S1FLJ-GS08的Datasheet PDF文件第4页浏览型号S1FLJ-GS08的Datasheet PDF文件第5页浏览型号S1FLJ-GS08的Datasheet PDF文件第6页浏览型号S1FLJ-GS08的Datasheet PDF文件第7页 
S1FLB, S1FLD, S1FLG, S1FLJ, S1FLK, S1FLM  
www.vishay.com  
Vishay Semiconductors  
Standard Recovery Rectifier, High Voltage Surface Mount  
FEATURES  
• For surface mounted applications  
• Low profile package  
• Ideal for automated placement  
• Glass passivated  
• High temperature soldering: 260 °C/10 s at  
terminals  
• Wave and reflow solderable  
17249  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: DO-219AB (SMF)  
Polarity: band denotes cathode end  
Weight: approx. 15 mg  
Packaging codes/options:  
GS18/10K per 13" reel (8 mm tape), 50K/box  
GS08/3K per 7" reel (8 mm tape), 30K/box  
Int. construction: Single  
PARTS TABLE  
PART  
ORDERING CODE  
S1FLB-GS18 or S1FLB-GS08  
S1FLD-GS18 or S1FLD-GS08  
S1FLG-GS18 or S1FLG-GS08  
S1FLJ-GS18 or S1FLJ-GS08  
S1FLK-GS18 or S1FLK-GS08  
S1FLM-GS18 or S1FLM-GS08  
MARKING  
REMARKS  
S1FLB  
S1FLD  
S1FLG  
S1FLJ  
S1FLK  
S1FLM  
FB  
FD  
FG  
FJ  
Tape and reel  
Tape and reel  
Tape and reel  
Tape and reel  
Tape and reel  
Tape and reel  
FK  
FM  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
S1FLB  
S1FLD  
S1FLG  
S1FLJ  
S1FLK  
S1FLM  
S1FLB  
S1FLD  
S1FLG  
S1FLJ  
S1FLK  
S1FLM  
S1FLB  
S1FLD  
S1FLG  
S1FLJ  
S1FLK  
S1FLM  
SYMBOL  
VRRM  
VRRM  
VRRM  
VRRM  
VRRM  
VRRM  
VRMS  
VRMS  
VRMS  
VRMS  
VRMS  
VRMS  
VDC  
VDC  
VDC  
VDC  
VDC  
VDC  
IF(AV)  
IF(AV)  
VALUE  
100  
200  
400  
600  
800  
1000  
70  
140  
280  
420  
560  
700  
100  
200  
400  
600  
800  
1000  
1.5  
UNIT  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Maximum DC blocking voltage  
V
V
A
A
Ttp = 75 °C  
TA = 65 °C (1)  
TL = 25 °C  
Maximum average forward rectified current  
0.7  
Peak forward surge current 8.3 ms single half sine-wave  
IFSM  
22  
A
Note  
(1)  
Averaged over any 20 ms periode  
Rev.1.0, 26-Aug-13  
Document Number: 81820  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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