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S1G

更新时间: 2024-09-20 09:25:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 80K
描述
Surface Mount Glass Passivated Rectifier

S1G 数据手册

 浏览型号S1G的Datasheet PDF文件第2页浏览型号S1G的Datasheet PDF文件第3页浏览型号S1G的Datasheet PDF文件第4页 
New Product  
S1A thru S1M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
DO-214AC (SMA)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRIMARY CHARACTERISTICS  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
IF(AV)  
1.0 A  
Halogen-free according to IEC 61249-2-21 definition  
VRRM  
IFSM  
EAS  
50 V to 1000 V  
40 A, 30 A  
5 mJ  
MECHANICAL DATA  
IR  
1.0 μA, 5.0 μA  
1.1 V  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
VF  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS compliant, and  
TJ max.  
150 °C  
TYPICAL APPLICATIONS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S1A  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M UNIT  
Device marking code  
SA  
SM  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
30  
A
Non-repetitive peak reverse avalanche energy  
at 25 °C, IAS = 1 A, L = 10 mH  
EAS  
5
mJ  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 89272  
Revision: 19-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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