Datasheet > S16D50C

S16D50C

更新时间： 2024-01-26 15:55:30

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
4页	80K
描述
16A DUAL SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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S16D50C 数据手册

WTE

POWER SEMICONDUCTORS

S16D30C – S16D60C

16A DUAL SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-3P

Dim

Min

3.20

4.70

—

Max

3.50

5.30

23.00

—

19.00

2.80

0.45

—

PIN1

3.20

0.85

16.20

2.70

3.65 Ø

4.50

5.65

1.40

2.50

12.70

6.00

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ L

1.70

3.15 Ø

—

Mechanical Data

Case: TO-3P, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

Polarity: See Diagram

Weight: 5.6 grams (approx.)

5.25

1.10

—

11.70

5.00

All Dimensions in mm

Mounting Position: Any

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 -

PIN 3 -

Case, PIN 2

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

S16D

30C

S16D

35C

S16D

40C

S16D

45C

S16D

50C

S16D

60C

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_C= 95°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

250

Forward Voltage

@I_F= 8.0A

V^FM

I^RM

0.55

0.65

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

1.0

Typical Junction Capacitance (Note 1)

C^j

700

1.5

°C/W

°C

Typical Thermal Resistance Junction to Case (Note 2)

Operating and Storage Temperature Range

R^ꢀ^JC

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

S16D30C – S16D60C

1 of 4

12 3 4

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与S16D50C相关器件

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S16D50C-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, ROHS COMPLIANT, PL
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