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S10GBU40-C PDF预览

S10GBU40-C

更新时间: 2024-11-23 12:14:35
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
2页 238K
描述
Voltage 200V ~800V 100Amp Glass Passivited Bridge Rectifers

S10GBU40-C 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
二极管类型:BRIDGE RECTIFIER DIODEBase Number Matches:1

S10GBU40-C 数据手册

 浏览型号S10GBU40-C的Datasheet PDF文件第2页 
S10GBU20-C ~ S10GBU80-C  
Voltage 200V ~ 800V  
10.0Amp Glass Passivited Bridge Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
GBU  
FEATURES  
Ideal for printed circuit board  
Reliable low cost construction utilizing  
molded plastic technique  
Plastic material has Underwriters Laboratory  
flammability classification 94V-0  
Mounting position: Any  
These are Halogen & Pb Free components  
This series is UL recognized under Component Index,  
file number E255340  
Millimeter  
Millimeter  
Min. Max.  
REF.  
REF.  
Min.  
Max.  
22.3  
18.8  
3.55  
18.5  
2.2  
A
B
C
D
E
F
21.7  
18.2  
3.15  
17.5  
1.8  
I
J
1.8  
1.8  
0.4  
9.9  
5.2  
3.3  
2.2  
2.2  
0.6  
10.1  
5.8  
3.8  
K
L
M
N
P
0.9  
1.2  
G
H
3.4  
3.8  
3 × 45°  
5
5.2  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Part Number  
Parameter  
Symbol  
Unit  
S10GBU20-C S10GBU40-C S10GBU60-C S10GBU80-C  
200 400 600 800  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
V
TC=100°C  
Average Rectified  
10  
3.6  
200  
(with heat sink)  
Output Current @50HZ  
TA=25°C  
IO  
A
sine wave, R-load  
(without heat sink)  
Peak Forward Surge Current @  
50HZ sine wave, 1 cycle, TA=25°C  
IFSM  
A
Maximum Peak Forward Voltage3  
VFM  
IRRM  
1.1  
5
V
Peak Reverse Current 2  
µA  
I2t Rating for Fusing @1mst10ms,  
TJ=25°C,Rating of per diode  
I2t  
166  
8
A2s  
Mounting Torque @ Recommend  
torque:5kg·cm  
Dielectric Strength1  
TOR  
Vdis  
Kgcm  
2
4.8  
21  
4
kV  
Typical Thermal Resistance (with heat sink)  
Typical Thermal Resistance(without heat sink)  
Typical Thermal Resistance(without heat sink)  
Operating and Storage temperature range  
R
θJC  
θJA  
°C/W  
°C/W  
°C/W  
°C  
R
RθJL  
TJ,TSTG  
150, -40~150  
Notes  
1. Terminals to caseAC 1 minute  
2. VRM=VRRM, Pulse measurement, Rating of per diode.  
3. IFM=10.0A, Pulse measurement, Rating of per diode  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
29-Jun-2012 Rev. A  
Page 1 of 2  

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