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RURD660S9A_F085 PDF预览

RURD660S9A_F085

更新时间: 2024-11-21 19:54:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 906K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252AA, DPAK-3/2

RURD660S9A_F085 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:DPAK-3/2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
其他特性:FREE WHEELING DIODE应用:ULTRA FAST SOFT RECOVERY POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:600 V最大反向电流:100 µA
最大反向恢复时间:0.083 µs子类别:Rectifier Diodes
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RURD660S9A_F085 数据手册

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October 2013  
RURD660S9A_F085  
Ultrafast Power Rectifier, 6A 600V  
Features  
6A, 600V Ultrafast Rectifier  
High Speed Switching ( trr=63ns(Typ.) @ IF=6A )  
Low Forward Voltage( VF=1.26V(Typ.) @ IF=6A )  
Avalanche Energy Rated  
The RURD660S9A_F085 is an ultrafast diode with soft  
recovery characteristics (trr< 83ns). It has a low forward  
voltage drop and is of silicon nitride passivated ion-  
implanted epitaxial planar construction. This device is  
intended for use as a freewheeling/clamping diode and  
rectifier in a variety of switching power supplies and  
other power switching applications. Its low stored charge  
and ultrafast soft recovery minimize ringing and electrical  
noise in many power switching circuits, thus reducing  
powerloss in the switching transistors.  
AEC-Q101 Qualified  
Applications  
General Purpose  
Switching Mode Power Supply  
Power switching circuits  
Pin Assignments  
1
2
D-PAK  
(TO-252)  
1
2
1. Cathode  
2. Anode  
1. Cathode  
2. Anode  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
Units  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
600  
V
V
Working Peak Reverse Voltage  
DC Blocking Voltage  
600  
600  
V
IF(AV)  
IFSM  
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
Operating Junction and Storage Temperature  
@ TC = 25°C  
6
60  
A
A
TJ, TSTG  
- 55 to +175  
°C  
Thermal Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Max  
3
Units  
°C/W  
°C/W  
°C/W  
RθJC  
RθJA  
RθJA  
Maximum Thermal Resistance, Junction to Case  
Maximum Thermal Resistance, Junction to Ambient  
Maximum Thermal Resistance, Junction to Ambient  
1
2
140  
50  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Tube  
Quantity  
RUR660  
RURD660S9A_F085  
TO-252-2L  
-
60  
Notes:  
1. Mounted on a minimum pad follow by JEDEC standard.  
2. Mounted on a 1 in2 pad of 2 oz copper follow by JEDEC standard.  
©2013 Fairchild Semiconductor Corporation  
RURD660S9A_F085 Rev. C2  
1
www.fairchildsemi.com  

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