Datasheet > RURD660S9A-F085

RURD660S9A-F085

更新时间： 2024-11-22 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	471K
描述
600 V、6 A、1.26 V、DPAK超快速整流器

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RURD660S9A-F085 数据手册

Ultrafast Power Rectifier

6 A, 600 V

RURD660S9A-F085

The RURD660S9A−F085 is an ultrafast diode with soft recovery

characteristics (trr < 83 ns). It has a low forward voltage drop and is of

silicon nitride passivated ion−implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping diode and

rectifier in a variety of switching power supplies and other power

switching applications. Its low stored charge and ultrafast soft

recovery minimize ringing and electrical noise in many power

switching circuits, thus reducing powerloss in the switching

transistors.

www.onsemi.com

1, 2, 4. Cathode

3. Anode

Features

• High Speed Switching (t = 63 ns (Typ.) @ I = 6 A)

• Low Forward Voltage (V = 1.26 V (Typ.) @ I = 6 A)

• Avalanche Energy Rated

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

DPAK3 (TO−252 3 LD)

Applications

CASE 369AS

• General Purpose

• Switching Mode Power Supply

• Power Switching Circuits

MARKING DIAGRAM

$Y&Z&3&K

RUR660

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Ratings

600

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

RUR660 = Specific Device Code

600

= ON Semiconductor Logo

= Assembly Plant Code

= 3−Digit Date Code

600

Average Rectified Forward Current

F(AV)

@ T = 25°C

= 2−Digits Lot Run Traceability Code

Non−repetitive Peak Surge Current

FSM

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

T , T

Operating Junction and Storage

Temperature

− 55 to +175

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Max

Unit

Maximum Thermal Resistance,

Junction to Case

°C/W

Maximum Thermal Resistance,

140

°C/W

(Note 1) Junction to Ambient

Maximum Thermal Resistance,

(Note 2) Junction to Ambient

1. Mounted on a minimum pad follow by JEDEC standard.

2. Mounted on a 1 in pad of 2 oz copper follow by JEDEC standard.

Publication Order Number:

July, 2020 − Rev. 4

RURD660S9A−F085/D

12 3 4 5 6

中文翻译

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与RURD660S9A-F085相关器件

型号	品牌	获取价格	描述	数据表
RURD660S9A-F085P	ONSEMI	获取价格	600 V、6 A、1.26 V、DPAK超快速整流器
RURD810	RENESAS	获取价格	RURD810
RUR-D810	ETC	获取价格	ULTRA HIGH SPEED RECTIFIERS
RUR-D815	ETC	获取价格	ULTRA HIGH SPEED RECTIFIERS
RUR-D820	ETC	获取价格	ULTRA HIGH SPEED RECTIFIERS
RURD840	INTERSIL	获取价格	8A, 400V - 600V Ultrafast Diodes
RURD840S	INTERSIL	获取价格	8A, 400V - 600V Ultrafast Diodes
RURD840S	RENESAS	获取价格	RURD840S
RURD840S9A	RENESAS	获取价格	8A, 400V, SILICON, RECTIFIER DIODE, TO-252, PLASTIC PACKAGE-3
RURD850S	RENESAS	获取价格	8A, 500V, SILICON, RECTIFIER DIODE, TO-252, PLASTIC PACKAGE-3

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