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RURD660S9A-F085

更新时间： 2023-09-03 20:39:01
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 471K
描述
600 V、6 A、1.26 V、DPAK超快速整流器

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中文翻译

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RURD660S9A-F085 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：compliantFactory Lead Time：4 weeks
风险等级：5.69二极管类型：RECTIFIER DIODE
Base Number Matches：1

RURD660S9A-F085 数据手册

 浏览型号RURD660S9A-F085的Datasheet PDF文件第2页浏览型号RURD660S9A-F085的Datasheet PDF文件第3页浏览型号RURD660S9A-F085的Datasheet PDF文件第4页浏览型号RURD660S9A-F085的Datasheet PDF文件第5页浏览型号RURD660S9A-F085的Datasheet PDF文件第6页 
Ultrafast Power Rectifier  
6 A, 600 V  
RURD660S9A-F085  
The RURD660S9A−F085 is an ultrafast diode with soft recovery  
characteristics (trr < 83 ns). It has a low forward voltage drop and is of  
silicon nitride passivated ion−implanted epitaxial planar construction.  
This device is intended for use as a freewheeling/clamping diode and  
rectifier in a variety of switching power supplies and other power  
switching applications. Its low stored charge and ultrafast soft  
recovery minimize ringing and electrical noise in many power  
switching circuits, thus reducing powerloss in the switching  
transistors.  
www.onsemi.com  
1, 2, 4. Cathode  
3. Anode  
Features  
• High Speed Switching (t = 63 ns (Typ.) @ I = 6 A)  
4
rr  
F
• Low Forward Voltage (V = 1.26 V (Typ.) @ I = 6 A)  
F
F
• Avalanche Energy Rated  
• AEC−Q101 Qualified and PPAP Capable  
• This is a Pb−Free Device  
2
3
1
DPAK3 (TO−252 3 LD)  
Applications  
CASE 369AS  
• General Purpose  
• Switching Mode Power Supply  
• Power Switching Circuits  
MARKING DIAGRAM  
$Y&Z&3&K  
RUR660  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Ratings  
600  
Unit  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
RUR660 = Specific Device Code  
V
600  
V
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= 3−Digit Date Code  
V
R
600  
V
I
Average Rectified Forward Current  
6
A
F(AV)  
@ T = 25°C  
= 2−Digits Lot Run Traceability Code  
C
I
Non−repetitive Peak Surge Current  
60  
A
FSM  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of  
this data sheet.  
T , T  
Operating Junction and Storage  
Temperature  
− 55 to +175  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Max  
Unit  
R
Maximum Thermal Resistance,  
Junction to Case  
3
°C/W  
q
JC  
R
Maximum Thermal Resistance,  
140  
50  
°C/W  
°C/W  
q
JA  
(Note 1) Junction to Ambient  
R
Maximum Thermal Resistance,  
(Note 2) Junction to Ambient  
q
JA  
1. Mounted on a minimum pad follow by JEDEC standard.  
2
2. Mounted on a 1 in pad of 2 oz copper follow by JEDEC standard.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
July, 2020 − Rev. 4  
RURD660S9A−F085/D  
 
123456

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