Datasheet > RU3560L

RU3560L

更新时间： 2022-11-12 00:21:22

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	328K
描述
N-Channel Advanced Power MOSFET

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RU3560L 数据手册

RU3560L

Electrical Characteristics (T_A=25°C Unless Otherwise Noted)

RU3560L

Symbol

Parameter

Test Condition

Unit

Min. Typ. Max.

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage

I_DSSZero Gate Voltage Drain Current

V_GS(th)Gate Threshold Voltage

V_GS=0V, I_DS=250mA

V_DS= 40V, V_GS=0V

T_J=85°C

V_DS=V_GS, I_DS=250mA

1.5

2.7

I_GSS

Gate Leakage Current

V_GS=±20V, V_DS=0V

±100

④

V_GS= 10V, I_DS=25A

V_GS= 4.5V, I_DS=20A

R_DS(ON)

Drain-Source On-state Resistance

Diode Characteristics

④

Diode Forward Voltage

I_SD=25A, V_GS=0V

1.2

V_SD

trr

Reverse Recovery Time

ISD=25A, dlSD/dt=100A/ms

Qrr

Reverse Recovery Charge

⑤

Dynamic Characteristics

R_G

C_iss

C_oss

C_rss

Gate Resistance

V_GS=0V,V_DS=0V,F=1MHz

1.2

980

160

Input Capacitance

VGS=0V,

VDS=20V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

t_d(ON)Turn-on Delay Time

t_rTurn-on Rise Time

t_d(OFF)Turn-off Delay Time

t_fTurn-off Fall Time

VDD=20V, RL=15W,

IDS=25A, VGEN= 10V,

RG=6W

⑤

Gate Charge Characteristics

Q_g

Q_gs

Q_gd

Total Gate Charge

2.5

VDS=20V, VGS= 10V,

IDS=25A

Gate-Source Charge

Gate-Drain Charge

Notes:

Pulse width limited by safe operating area.

Calculated continuous current based on maximum allowable junction temperature. Current limited by

bond wire.

Limited by T_Jmax, I_AS=20A, V_DD= 30V, R_G= 50Ω , Starting T_J= 25°C.

Pulse test ; Pulse width£300ms, duty cycle£2%.

Guaranteed by design, not subject to production testing.

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– FEB., 2011

www.ruichips.com

123 4 5 6 7...9

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