Datasheet > RU3710R

RU3710R

更新时间： 2024-11-25 09:42:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
12页	474K
描述
N-Channel Advanced Power MOSFET

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中文翻译

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数据手册

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RU3710R 数据手册

RU3710

N-Channel Advanced Power MOSFET

Features

Pin Description

• 100V/60A

RDS (ON)=14mW(Typ.) @ VGS=10V

• Ultra Low On-Resistance

TO-220

TO-247

TO-220F

TO-263

• Exceptional dv/dt capability

• Fast Switching and Fully Avalanche Rated

• 100% avalanche tested

• Lead Free and Green Available

Applications

·Switching Application Systems

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

100

±25

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

-55 to 175

T_STG

Storage Temperature Range

Diode Continuous Forward Current

TC=25°C

Mounted on Large Heat Sink

TC=25°C

250

I_DP

I_D

300ms Pulsed Drain Current Tested

①

TC=25°C

Continue Drain Current

TC=100°C

TC=25°C

TC=100°C

250

150

0.5

P_D

Maximum Power Dissipation

RqJC

RqJA

Thermal Resistance -Junction to Case

Thermal Resistance-Junction to Ambient

°C/W

Drain-Source Avalanche Ratings

EAS

Avalanche Energy ,Single Pulsed

800

CopyrightÓ Ruichips Semiconductor Co., Ltd

www.ruichips.com

Rev.C –JAN., 2009

12 3 4 5 6 7...12

中文翻译

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