RU3710
N-Channel Advanced Power MOSFET
Features
Pin Description
• 100V/60A
RDS (ON)=14mW(Typ.) @ VGS=10V
• Ultra Low On-Resistance
TO-220
TO-247
TO-220F
TO-263
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• Lead Free and Green Available
Applications
·Switching Application Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
100
±25
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
175
Maximum Junction Temperature
-55 to 175
TSTG
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
I
S
60
A
Mounted on Large Heat Sink
TC=25°C
250
IDP
ID
300ms Pulsed Drain Current Tested
①
60
TC=25°C
A
Continue Drain Current
TC=100°C
TC=25°C
TC=100°C
55
250
150
0.5
PD
Maximum Power Dissipation
W
RqJC
RqJA
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
°C/W
62
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
800
mJ
CopyrightÓ Ruichips Semiconductor Co., Ltd
www.ruichips.com
Rev.C –JAN., 2009