Datasheet > RU35122S

RU35122S

更新时间： 2022-11-12 00:22:19

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
12页	490K
描述
N-Channel Advanced Power MOSFET

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RU35122S 数据手册

RU35122S

Electrical Characteristics (T_A=25°C Unless Otherwise Noted)

RU35122S

Symbol

Parameter

Test Condition

Unit

Min. Typ. Max.

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage

V_GS=0V, I_DS=250mA

V_DS= 40V, V_GS=0V

I_DSSZero Gate Voltage Drain Current

T_J=85°C

V_GS(th)Gate Threshold Voltage

I_GSSGate Leakage Current

V_DS=V_GS, I_DS=250mA

V_GS=±20V, V_DS=0V

±100

④

Drain-Source On-state Resistance V_GS= 10V, I_DS=60A

2.7

3.7

R_DS(ON)

Diode Characteristics

④

Diode Forward Voltage

I_SD=60 A, V_GS=0V

1.2

V_SD

trr

Reverse Recovery Time

ISD=60A, dlSD/dt=100A/ms

Qrr

Reverse Recovery Charge

⑤

Dynamic Characteristics

R_G

C_iss

C_oss

C_rss

Gate Resistance

V_GS=0V,V_DS=0V,F=1MHz

1.4

4220

970

520

Input Capacitance

VGS=0V,

VDS= 32V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

t_d(ON)Turn-on Delay Time

t_rTurn-on Rise Time

t_d(OFF)Turn-off Delay Time

t_fTurn-off Fall Time

VDD=20V, RL=35W,

IDS=60A, VGEN= 10V,

RG=4W

105

⑤

Gate Charge Characteristics

Q_g

Q_gs

Q_gd

Total Gate Charge

120

VDS=32V, VGS= 10V,

IDS=60A

Gate-Source Charge

Gate-Drain Charge

Notes:

Pulse width limited by safe operating area.

Calculated continuous current based on maximum allowable junction temperature. Current limited by

bond wire. Package limitation current is 75A.

Limited by T_Jmax, I_AS=71A, V_DD= 48V, R_G= 47Ω , Starting T_J= 25°C.

Pulse test ; Pulse width£300ms, duty cycle£2%.

Guaranteed by design, not subject to production testing.

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C– MAR., 2011

www.ruichips.com

123 4 5 6 7...12

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