Datasheet > RU3415EB

RU3415EB

更新时间： 2024-04-09 19:01:57

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
10页	411K
描述
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RU3415EB 数据手册

RU40C40M

Electrical Characteristics (T_A=25°C Unless Otherwise Noted)

RU40C40M

Symbol

Parameter

Test Condition

Unit

Min. Typ. Max.

Static Characteristics

V_GS=0V, I_DS=250µA

-40

BV_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

V_GS=0V, I_DS=-250µA

V_DS=40V, V_GS=0V

T_J=125°C

V_DS=-40V, V_GS=0V

T_J=125°C

-1

I_DSS

µA

-30

V_DS=V_GS, I_DS=250µA

V_DS=V_GS, I_DS=-250µA

V_GS=±20V, V_DS=0V

V_GS=10V, I_DS=20A

V_GS=-10V, I_DS=-20A

V_GS=4.5V, I_DS=16A

V_GS=-4.5V, I_DS=-16A

2.5

-2.5

±1

V_GS(th)

Gate Threshold Voltage

Gate Leakage Current

-1

I_GSS

µA

±10

⑤

Drain-Source On-state Resistance

mΩ

R_DS(ON)

Diode Characteristics

I_SD=20A, V_GS=0V

I_SD=-20A, V_GS=0V

1.2

⑤

Diode Forward Voltage

V_SD

-1.3

N-Channel

I_SD=20A, dl_SD/dt=100A/µs

Reverse Recovery Time

P-Channel

I_SD=-20A, dl_SD/dt=100A/µs

Reverse Recovery Charge

⑥

Dynamic Characteristics

1.2

1.5

R_G

C_iss

C_oss

C_rss

V_GS=0V,V_DS=0V,F=1MHz

Gate Resistance

Ω

880

1900

170

245

N-Channel

V_GS=0V,V_DS=20V,

Frequency=1.0MHz

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

P-Channel

V_GS=0V,V_DS=-20V,

Frequency=1.0MHz

135

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– JAN., 2017

www.ruichips.com

123 4 5 6 7...10

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