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RTC-9701JE PDF预览

RTC-9701JE

更新时间: 2024-09-25 15:50:03
品牌 Logo 应用领域
精工 - SEIKO 时钟光电二极管外围集成电路
页数 文件大小 规格书
2页 86K
描述
0 TIMER(S), REAL TIME CLOCK, PDSO20, VSOJ-20

RTC-9701JE 数据手册

 浏览型号RTC-9701JE的Datasheet PDF文件第2页 
Real time clock module  
SERIAL REAL TIME CLOCK MODULE WITH EEPROM  
RTC-9701JE  
Product number (please refer to page 1)  
Q 4 1 9 7 0 1 7 x 0 0 0 1 0 0  
• Built-in frequency adjusted 32.768 kHz crystal unit.  
• Include EEPROM 4 kbit (256 x 16 bit)User Memory.  
• Include High Precision Voltage Detector. (2.5 V ± 0.1 V)  
• Serial Interface which can be controlled by 4 or 3 signal lines.  
• Timer IRQ and Alarm IRQ function available.  
• 32.768 kHz clock frequency Output. (CMOS OUTPUT)  
• Automatic adjustment for leap year.  
Actual size  
• Wide range of clock voltage between 1.8 V and 5.5 V.  
• Low backup current : 0.8 µA / 3.0 V. (Typ.)  
The details are mentioned in the application manual.  
http://www.epsondevice.com  
Item  
Unit  
V
Symbol  
VDD,VDD2  
VIN  
Condition  
VDD, VDD2 to GND  
Input Pin  
Max.  
+6.0  
Min.  
-0.3  
Supply voltage  
No.  
1
No.  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
Pin terminal  
VDD2  
VEX  
FOE  
Pin terminal  
N.C  
VDD+0.3  
+6.0  
GND-0.3  
-0.3  
Input voltage  
#20  
#11  
VAIN  
VEX pin  
2
N.C  
3
Output voltage  
N.C  
VOUT AIRQ,TIRQ,FOUT,DO pins  
VDD+0.3  
+125  
GND-0.3  
-55  
4
AIRQ  
TIRQ  
CE  
N.C  
Storage temperature  
°C  
TSTG Stored as bare proeduct after unpacking  
5
N.C  
6
N.C  
7
CLK  
DI  
N.C  
Symbol  
VDD  
Condition  
VDD  
Item  
Min.  
Max.  
Unit  
#1  
#10  
8
GND  
GND  
FOUT  
Power voltage  
Clock voltage  
2.7  
1.8  
1.4  
-40  
3.6  
5.5  
5.5  
+85  
9
DO  
10  
VDD  
VDD2  
VDD2  
V
VEX  
VEX  
Analog voltage  
Operating temperature  
TOPR  
No condensation  
°C  
(Unit: mm)  
Unit  
Symbol  
f/fo  
Item  
Condition  
Range  
5 ±23∗  
3 Max.  
-6  
x 10  
s
Frequency tolerance  
Oscillation start up time  
Frequency temperature  
characteristics  
Ta=+25 °C, VDD2=3.0 V  
Ta=+25 °C, VDD=3.0 V  
(VSOJ 20-pin)  
tSTA  
-6  
Top  
Ta=-10 °C to +70 °C, VDD=3.0 V,+25 °C  
+10/-120 x 10  
Frequency voltage  
characteristics  
-6  
x 10 /V  
f/V  
fa  
Ta=+25 °C,VDD=1.8 V to 5.5 V  
Ta=+25 °C,VDD=3.0 V, first year  
±2.0  
±5.0  
-6  
Aging  
x 10 /year  
7.0 ±0.3  
Please ask tighter tolerance.  
6.2 Max.  
GND=0 V,VDD=2.7 V to 3.6 V,VDD2=1.8 V to 5.5 V,Ta=-40 °C to +85 °C  
Condition  
Symbol  
IDD1  
Item  
Min. Typ. Max.  
Unit  
0.2 3.0  
0.65  
0.22  
(0.75)  
(0.75)  
V
DD =3.0 V,FOUT output off  
DD =3.0 V,CL=0 pF,  
OUT=32.768 kHz output  
DD2 =3.0 V,FOUT output off  
DD2 =3.0 V,CL=0 pF,  
OUT=32.768 kHz output  
VDD current  
IDD2  
V
1.0 3.5  
consumption  
Metal may be exposed on the top or bottom of this product. This won't affect any quality, reliability or electrical spec.  
µA  
V
F
IBK1  
IBK2  
0.8 1.0  
0.8 1.0  
V
VDD2 current  
consumption  
V
F
VIH  
VIL  
0.8VDD  
0
VDD  
Input voltage  
CE,CLK,DI,FOE  
CE,CLK,DI,FOE  
0.2VDD  
Input leakage  
current  
ILK  
-0.5  
0.5  
µA  
VIN=VDD or GND  
RDWN  
VOH1  
VOH2  
VOL1  
VOL2  
Pulldown  
75  
600  
CE,FOE  
IOH=-1 mA  
IOH=-1 mA  
IOL=1 mA  
IOL=1 mA  
kΩ  
VDD-0.4  
VDD-0.4  
GND  
"H" Output voltage  
GND=0V,VDD=2.7 V to 3.6 V, VDD2=1.8 V to 5.5 V,Ta=-40 °C to +85 °C  
Typ.  
Min.  
Unit  
bit  
Item  
Max.  
Condition  
Symbol  
GND+0.4  
GND+0.4  
V
Memory contents  
Program/Erase Cycle  
Current consumption  
Access time  
4 k (256 x 16)  
GND  
"L" Output voltage  
Leakage current  
5
Times  
mA  
10  
AIRQ,TIRQ  
IOL=2 mA  
VOL3  
IOZ  
GND+0.4  
GND  
-0.5  
IDD3  
1
5
EEPROM write  
3
tWNV  
0.5  
DO,AIRQ,TIRQ ,FOUT VOUT=VDD or GND  
ms  
µA  
10  
77  

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