Real time clock module
SERIAL REAL TIME CLOCK MODULE WITH EEPROM
RTC-9701JE
Product number (please refer to page 1)
Q 4 1 9 7 0 1 7 x 0 0 0 1 0 0
• Built-in frequency adjusted 32.768 kHz crystal unit.
• Include EEPROM 4 kbit (256 x 16 bit)User Memory.
• Include High Precision Voltage Detector. (2.5 V ± 0.1 V)
• Serial Interface which can be controlled by 4 or 3 signal lines.
• Timer IRQ and Alarm IRQ function available.
• 32.768 kHz clock frequency Output. (CMOS OUTPUT)
• Automatic adjustment for leap year.
Actual size
• Wide range of clock voltage between 1.8 V and 5.5 V.
• Low backup current : 0.8 µA / 3.0 V. (Typ.)
The details are mentioned in the application manual.
http://www.epsondevice.com
Item
Unit
V
Symbol
VDD,VDD2
VIN
Condition
VDD, VDD2 to GND
Input Pin
Max.
+6.0
Min.
-0.3
Supply voltage
No.
1
No.
20
19
18
17
16
15
14
13
12
11
Pin terminal
VDD2
VEX
FOE
Pin terminal
N.C
VDD+0.3
+6.0
GND-0.3
-0.3
Input voltage
#20
#11
VAIN
VEX pin
2
N.C
3
Output voltage
N.C
VOUT AIRQ,TIRQ,FOUT,DO pins
VDD+0.3
+125
GND-0.3
-55
4
AIRQ
TIRQ
CE
N.C
Storage temperature
°C
TSTG Stored as bare proeduct after unpacking
5
N.C
6
N.C
7
CLK
DI
N.C
Symbol
VDD
Condition
VDD
Item
Min.
Max.
Unit
#1
#10
8
GND
GND
FOUT
Power voltage
Clock voltage
2.7
1.8
1.4
-40
3.6
5.5
5.5
+85
9
DO
10
VDD
VDD2
VDD2
V
VEX
VEX
Analog voltage
Operating temperature
TOPR
No condensation
°C
(Unit: mm)
Unit
Symbol
∆f/fo
Item
Condition
Range
5 ±23∗
3 Max.
-6
x 10
s
Frequency tolerance
Oscillation start up time
Frequency temperature
characteristics
Ta=+25 °C, VDD2=3.0 V
Ta=+25 °C, VDD=3.0 V
(VSOJ 20-pin)
tSTA
-6
Top
Ta=-10 °C to +70 °C, VDD=3.0 V,+25 °C
+10/-120 x 10
Frequency voltage
characteristics
-6
x 10 /V
f/V
fa
Ta=+25 °C,VDD=1.8 V to 5.5 V
Ta=+25 °C,VDD=3.0 V, first year
±2.0
±5.0
-6
Aging
x 10 /year
7.0 ±0.3
∗ Please ask tighter tolerance.
6.2 Max.
GND=0 V,VDD=2.7 V to 3.6 V,VDD2=1.8 V to 5.5 V,Ta=-40 °C to +85 °C
Condition
Symbol
IDD1
Item
Min. Typ. Max.
Unit
0.2 3.0
0.65
0.22
(0.75)
(0.75)
V
DD =3.0 V,FOUT output off
DD =3.0 V,CL=0 pF,
OUT=32.768 kHz output
DD2 =3.0 V,FOUT output off
DD2 =3.0 V,CL=0 pF,
OUT=32.768 kHz output
VDD current
IDD2
V
1.0 3.5
consumption
Metal may be exposed on the top or bottom of this product. This won't affect any quality, reliability or electrical spec.
µA
V
F
IBK1
IBK2
0.8 1.0
0.8 1.0
V
VDD2 current
consumption
V
F
VIH
VIL
0.8VDD
0
VDD
Input voltage
CE,CLK,DI,FOE
CE,CLK,DI,FOE
0.2VDD
Input leakage
current
ILK
-0.5
0.5
µA
VIN=VDD or GND
RDWN
VOH1
VOH2
VOL1
VOL2
Pulldown
75
600
CE,FOE
IOH=-1 mA
IOH=-1 mA
IOL=1 mA
IOL=1 mA
kΩ
VDD-0.4
VDD-0.4
GND
"H" Output voltage
GND=0V,VDD=2.7 V to 3.6 V, VDD2=1.8 V to 5.5 V,Ta=-40 °C to +85 °C
Typ.
Min.
Unit
bit
Item
Max.
Condition
Symbol
GND+0.4
GND+0.4
V
Memory contents
Program/Erase Cycle
Current consumption
Access time
4 k (256 x 16)
GND
"L" Output voltage
Leakage current
5
Times
mA
10
AIRQ,TIRQ
IOL=2 mA
VOL3
IOZ
GND+0.4
GND
-0.5
IDD3
1
5
EEPROM write
3
tWNV
0.5
DO,AIRQ,TIRQ ,FOUT VOUT=VDD or GND
ms
µA
10
77