Datasheet > RT9611AGQW

RT9611AGQW

更新时间： 2022-06-24 15:44:45

品牌	Logo	应用领域
立锜 - RICHTEK		/
页数	文件大小	规格书
15页	228K
描述
Synchronous Rectified Buck MOSFET Drivers

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RT9611AGQW 数据手册

RT9611A/B

Application Information

propagation delay, t_UGATEpdh. The RT9611B has

comparatively large t_UGATEpdhto further prevent from shoot

through when high side power MOSFETs are going to be

turned on. The long propagation delay of the RT9611B

sacrifices efficiency for compromise of system safety.

Hence, the RT9611A is usually recommended to be

utilized in performance oriented applications, such as high

power density CPU VR or GPU VR.

The RT9611A/B is a High frequency, synchronous rectified,

single phase dual MOSFET driver containing Richtek's

advanced MOSFET driver technologies. The RT9611A/B

is designed to be able to adapt from normal MOSFET

driving applications to high performance CPU VR driving

capabilities. The RT9611A/B can be utilized under both

V_CC= 5V or V_CC= 12V applications which may happen in

different fields of electronics application circuits. In the

efficiency point of view, higher VCC equals higher driving

voltage of UG/LG which may result in higher switching

loss and lower conduction loss of power MOSFETs. The

choice of V_CC= 12V or V_CC= 5V can be a tradeoff to

optimize system efficiency.

Non-overlap Control

To prevent the overlap of the gate drives during the UGATE

pull low and the LGATE pull high, the non-overlap circuit

monitors the voltages at the PHASE node and high side

gate drive (UGATE-PHASE). When the PWM input signal

goes low, UGATE begins to pull low (after propagation

delay). Before LGATE can pull high, the non-overlap

protection circuit ensures that the monitored voltages have

gone below 1.1V. Once the monitored voltages fall below

1.1V, LGATE begins to turn high. For short pulse condition,

if the PHASE pin had not gone high after LGATE pulls

low, the LGATE has to wait for 200ns before pull high. By

waiting for the voltages of the PHASE pin and high side

gate drive to fall below 1.1V, the non-overlap protection

circuit ensures that UGATE is low before LGATE pulls

high.

The RT9611A/B are designed to drive both high side and

low sideN-MOSFET through external input PWM control

signal. It has power on protection function which held

UGATE and LGATE low before the VCC voltage rises to

higher than rising threshold voltage.After the initialization,

the PWM signal takes the control. The rising PWM signal

first forces the LGATE signal turns low then UGATE signal

is allowed to go high just after a non-overlapping time to

avoid shoot through current. The falling of PWM signal

first forces UGATE to go low. When UGATE and PHASE

signal reach a predetermined low level, LGATE signal is

allowed to turn high.

Also to prevent the overlap of the gate drives during LGATE

pull low and UGATE pull high, the non-overlap circuit

monitors the LGATE voltage. When LGATE go below 1.1V,

UGATE is allowed to go high.

The PWM signal is acted as “High” if the signal is above

the rising threshold and acted as “Low” if the signal is

below the falling threshold. Any signal level enters and

remains within the shutdown window is considered as “tri-

state” the output drivers are disabled and both MOSFET

gates are pulled and held low. If left the PWM signal floating,

the pin will be kept around 1.8V by the internal divider and

provide the PWM controller with a recognizable level. OD

pin will also turn off both high/low side MOSFETs when

tied to GND.

Driving Power MOSFETs

The DC input impedance of the power MOSFET is

extremely high. When V_gs1or V_gs2is at 12V or 5V, the

gate draws the current only for few nano-amperes. Thus

once the gate has been driven up to “ON” level, the

current could be negligible.

The RT9611A/B builds in an internal bootstrap power switch

to replace external bootstrap diode, and this can facilitate

PCB design and reduce total BOM cost of the system.

Hence, no external bootstrap diode is required in real

applications.

However, the capacitance at the gate to source terminal

should be considered. It requires relatively large currents

to drive the gate up and down 12V (or 5V) rapidly. It is

also required to switch drain current on and off with the

required speed. The required gate drive currents are

calculated as follows.

The difference of the RT9611A and the RT9611B is the

is a registered trademark of Richtek Technology Corporation.

DS9611A/B-03 June 2012

www.richtek.com

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与RT9611AGQW相关器件

型号	品牌	描述	获取价格	数据表
RT9611B	RICHTEK	Synchronous Rectified Buck MOSFET Drivers	获取价格
RT9611C	RICHTEK	Synchronous Rectified Buck MOSFET Drivers	获取价格
RT9611D	RICHTEK	Synchronous Rectified Buck MOSFET Drivers	获取价格
RT9612A	RICHTEK	Synchronous-Rectified Buck MOSFET Driver	获取价格
RT9612B	RICHTEK	Synchronous-Rectified Buck MOSFET Driver	获取价格
RT9614A	RICHTEK	暂无描述	获取价格
RT9614C	RICHTEK	Single Phase Synchronous Rectified Buck MOSFET Driver	获取价格
RT9618	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9618_11	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9618A	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9618AGS	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9618APS	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9618GS	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9618PS	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9619	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9619_11	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9619A	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9619AGS	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9619APS	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格
RT9619GS	RICHTEK	Synchronous-Rectified Buck MOSFET Drivers	获取价格

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