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RSS100N03TB PDF预览

RSS100N03TB

更新时间: 2024-11-16 12:59:27
品牌 Logo 应用领域
罗姆 - ROHM 开关
页数 文件大小 规格书
4页 61K
描述
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RSS100N03TB 数据手册

 浏览型号RSS100N03TB的Datasheet PDF文件第2页浏览型号RSS100N03TB的Datasheet PDF文件第3页浏览型号RSS100N03TB的Datasheet PDF文件第4页 
RSS100N03  
Transistor  
Switching (30V, ±10A)  
RSS100N03  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low on-resistance.  
SOP8  
5.0±0.2  
2) Built-in G-S Protection Diode.  
3) Small and Surface Mount Package (SOP8).  
0.2±0.1  
zApplications  
Power switching, DC/DC converter.  
(1)Source  
(2)Source  
(3)Source  
(4)Gate  
(5)Drain  
(6)Drain  
(7)Drain  
(8)Drain  
0.4±0.1  
0.1  
1.27  
Each lead has same dimensions  
zEquivalent circuit  
zStructure  
Silicon N-channel MOS FET  
(8)  
(7)  
(6)  
(5)  
(8) (7) (6) (5)  
2
(1) (2) (3) (4)  
1
(1)Source  
(2)Source  
(3)Source  
(4)Gate  
(5)Drain  
(6)Drain  
(7)Drain  
(8)Drain  
(1)  
(2)  
(3)  
(4)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
A protection diode is included between the gate and  
the source terminals to protect the diode against static  
electricity when the product is in use. Use the protection  
circuit when the fixed voltages are exceeded.  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
V
30  
20  
V
Continuous  
Pulsed  
±10  
A
Drain current  
1
IDP  
A
±40  
Continuous  
Pulsed  
IS  
1.6  
A
Source current  
(Body diode)  
1
ISP  
6.4  
A
2
Total power dissipatino  
Channel temperature  
Strage temperature  
PD  
2
W
Tch  
Tstg  
150  
°C  
°C  
55 to +150  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board.  
1/3  

RSS100N03TB 替代型号

型号 品牌 替代类型 描述 数据表
RSS100N03FU6TB ROHM

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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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