RSS060P05

更新时间： 2024-09-30 04:07:27

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
5页	126K
描述
4V Drive Pch MOS FET

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中文翻译

获取价格

数据手册

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RSS060P05 数据手册

RSS060P05

Transistor

4V Drive Pch MOS FET

RSS060P05

zStructure

zExternal dimensions (Unit : mm)

Silicon P-channel

MOS FET

SOP8

5.0

1.75

0.4

)

( )

(

zFeatures

1) Built-in G-S Protection Diode.

2) Small and Surface Mount Package (SOP8).

( )

0.2

1.27

1pin mark

zApplications

Each lead has same dimensions

Power switching , DC / DC converter , Inverter

zPackaging dimensions

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500

RSS060P05

zAbsolute maximum ratings (Ta=25°C)

zEquivalent circuit

(8)

(7)

(6)

(5)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

-45

Unit

±20

Continuous

Pulsed

±6.0

±24

Drain current

∗2

I_DP

∗1

(1) Source

(2) Source

(3) Source

(4) Gate

(5) Drain

(6 )Drain

(7) Drain

(8) Drain

I_S

Continuous

Pulsed

-1.6

Source current

(Body diode)

I_SP

-24

Total power dissipation

Chanel temperature

P_D

^oC

(1)

(2)

(3)

(4)

T_ch

150

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Range of Storage temperature

*1 PW≤10µｓ、Duty cycle≤1%

*2 Mounted on a ceramic board

T_stg

-55 to +150

zThermal resistance

Parameter

Chanel to ambient

Symbol

R_{th(ch-a) *}

Limits

62.5

Unit

^oC/W

* Mounted on a ceramic board

1/4

12 3 4 5

中文翻译

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