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RSAC6.8CST2RA PDF预览

RSAC6.8CST2RA

更新时间: 2024-11-11 12:27:43
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
4页 484K
描述
Ultra Low Capacitance ESD Protection Diode

RSAC6.8CST2RA 数据手册

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Data Sheet  
Ultra Low Capacitance ESD Protection Diode  
RSAC6.8CS  
lApplications  
lDimensions (Unit : mm)  
lLand size figure (Unit : mm)  
ESD Protection  
0.55  
0.16±0.05  
0.6±0.05  
lFeatures  
1)Ultra small mold type.(VMN2)  
2)Low Capacitance.  
3)High Reliability.  
4)By chip-mounter, automatic mounting is possible.  
VMN2  
0.156  
lConstruction  
0.37±0.03  
0.35±0.1  
Silicon epitaxial planar  
lStructure  
ROHM : VMN2  
dot (year week factory) + day  
lTaping dimensions (Unit : mm)  
φ 1.55  
0.2±0.05  
2±0.05  
4±0.1  
φ 0.5  
0.52  
2±0.05  
4.0±0.1  
0.7±0.05  
lAbsolute maximum ratings (Ta=25C)  
Parameter  
Power dissipation  
Limits  
Symbol  
P
Unit  
mW  
C  
100  
150  
Junction temperature  
Storage temperature  
Tj  
C  
Tstg  
-55 to +150  
lElectrical characteristics (Ta=25C)  
Parameter  
Zener voltage  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
7.33  
1.0  
-
Unit  
V
Vz  
IR  
IZ=5mA  
6.7  
-
-
Reverse current  
VR=3.0V  
-
-
μA  
pF  
VR=0V , f=1MHz  
Capacitance between terminals  
Ct  
0.3  
* Zener voltage (VZ) shall be measured at 40ms after loading current.  
* Electrical characteristic assurance is just only zener direction.  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.10 - Rev.A  
1/3  

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