Datasheet > RS5D

RS5D

更新时间： 2024-11-02 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	518K
描述
5.0A patch fast recovery diode 200V SMC series

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RS5D 数据手册

RS5A - RS5M

SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 50-1000V

CURRENT: 5.0 A

Features

Glass Passivated Die Construction

Fast Recovery Time for High Efficiency

Low Forward Voltage Drop and High Current

Capability

Ideally Suited for Automatic Assembly

Plastic Material: UL Flammability

Classification Rating 94V-0

SMC/DO-214AB

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Mechanical Data

Case: SMC(DO-214AB),Molded Plastic

Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

@ T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

RS5K

RS5A

RS5B

RS5D

RS5G RS5J

RS5M

Unit

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

RRM

RMS

100

Maximum DC blocking voltage

Maximum average forward rectified current

I(AV)

5.0

at TL

=75 C

Peak forward surge current

FSM

150.0

1.3

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 5.0A

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

T =25 C

5.0

100.0

A=100 C

(NOTE 1)

150

250

500

Typical junction capacitance (NOTE 2)

78.0

50.0

C/W

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

θ^JA

TJ,TSTG

-65 to +150

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

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