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RS407M-BP PDF预览

RS407M-BP

更新时间: 2024-11-12 19:05:35
品牌 Logo 应用领域
美微科 - MCC 局域网二极管
页数 文件大小 规格书
3页 220K
描述
Bridge Rectifier Diode, 1 Phase, 4A, 1000V V(RRM), Silicon, RS-4M, 4 PIN

RS407M-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:RS-4M, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:120 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RS407M-BP 数据手册

 浏览型号RS407M-BP的Datasheet PDF文件第2页浏览型号RS407M-BP的Datasheet PDF文件第3页 
RS401M  
THRU  
M C C  
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20736 Marilla St.  
ꢆꢍꢉꢎꢏꢐꢄꢃꢎꢍꢑꢅꢆꢒꢅꢓꢔꢕꢔꢔ  
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$ꢉ%ꢘꢅ   ꢙꢚꢔꢚ ꢅ!ꢛꢔ"#ꢓꢕꢓ  
TM  
Micro Commercial Components  
RS407M  
4 Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
Features  
ldeal for printed circuit board  
Surge overload rating: 120amperes peak  
Mounting position: Any  
UL Recognized File # E165989  
Case Material: Molded Plastic. UL Flammability  
50 to 1000 Volts  
Classification Rating 94V-0 and MSL Rating 1  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
RS-4M  
Maximum Ratings  
Operating Junction Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
I
A
K
J
L
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
B
D
E
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
M
C
N
F
RS401M  
RS402M  
RS403M  
RS404M  
RS405M  
RS406M  
RS407M  
RS401M  
RS402M  
RS403M  
RS404M  
RS405M  
RS406M  
RS407M  
35V  
70V  
G
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
H
H
H
1000V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
~
~
Case Type  
Average Forward  
Current  
IF(AV)  
4 A  
TC = 115°C  
DIMENSIONS  
Peak Forward Surge  
Current  
IFSM  
120 A  
8.3ms, half sine  
INCHES  
MIN  
MM  
DIM  
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MAX  
MIN  
23.30  
14.70  
17.20  
3.90  
3.30  
1.50  
0.90  
7.30  
4.40  
9.30  
3.40  
3.10  
2.50  
0.60  
MAX  
NOTE  
Maximum Forward  
Voltage Drop Per  
Element  
.917  
.578  
.677  
.154  
.130  
.060  
.035  
.287  
.173  
.366  
.134  
.122  
.098  
.024  
.992  
.600  
.700  
.161  
.145  
.075  
.043  
.303  
.189  
.382  
.150  
.134  
.114  
.043  
25.20  
15.30  
17.80  
4.10  
3.70  
1.90  
1.10  
7.70  
4.80  
9.70  
3.80  
3.40  
2.90  
1.10  
VF  
1.0V  
IFM = 2.0A;  
TJ = 25°C (Note 2)  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
5 µA  
500 uA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
40 pF Measured at  
1.0MHz, VR=4.0V  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
2. Pulse Test: Pulse Width 300usec, Duty Cycle 1%  
www.mccsemi.com  
1 of 3  
Revision: 4  
2008/01/30  

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