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RS3DB-13-F

更新时间： 2024-02-05 07:49:05
品牌 Logo 应用领域
美台 - DIODES 功效光电二极管
页数 文件大小 规格书
4页 129K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, GREEN, PLASTIC, SMB, 2 PIN

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中文翻译

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RS3DB-13-F 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active包装说明：R-PDSO-C2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：10 weeks风险等级：1.11
应用：EFFICIENCY配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.3 VJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：100 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：3 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：200 V最大反向恢复时间：0.15 µs
子类别：Rectifier Diodes表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

RS3DB-13-F 数据手册

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RS3A/B - RS3M/B  
Green  
3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Glass Passivated Die Construction  
•
•
Case: SMB, SMC  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Lead Free Plating (Matte Tin Finish).  
Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band or Cathode Notch  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: SMB 0.093 grams (approximate)  
SMC 0.21 grams (approximate)  
Fast Recovery Time for High Efficiency  
Surge Overload Rating to 100A Peak  
Ideally Suited for Automatic Assembly  
Lead Free Finish/RoHS Compliant (Note 1)  
Green Molding Compound (No Halogen and Antimony)  
(Note 2)  
•
•
•
•
•
•
Top View  
Bottom View  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
RS3  
RS3  
RS3  
RS3  
RS3  
RS3  
K/KB M/MB  
RS3  
Characteristic  
Symbol  
Unit  
A/AB B/BB D/DB G/GB J/JB  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage (Note 6)  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
280  
3.0  
V
A
VR(RMS)  
IO  
Average Rectified Output Current  
@ TT = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on Rated Load  
100  
A
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
25  
11  
Unit  
SMB  
SMC  
Typical Thermal Resistance Junction to Terminal (Note 3)  
°C/W  
Rθ  
JT  
Operating and Storage Temperature Range  
-65 to +150  
TJ, TSTG  
°C  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
RS3  
RS3  
RS3  
RS3  
RS3  
RS3  
K/KB M/MB  
RS3  
Characteristic  
Symbol  
VFM  
Unit  
A/AB B/BB D/DB G/GB J/JB  
1.3  
V
Forward Voltage  
@ IF = 3.0A  
@ TA 25°C  
@ TA = 125°C  
Peak Reverse Current  
=
5.0  
250  
IRM  
μA  
at Rated DC Blocking Voltage (Note 6)  
Maximum Recovery Time (Note 5)  
150  
250  
500  
ns  
trr  
Typical Total Capacitance (Note 4)  
50  
pF  
CT  
Notes:  
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/quality/lead_free.html.  
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.  
3. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.  
4. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
5. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.  
6. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
July 2009  
© Diodes Incorporated  
RS3A/B - RS3M/B  
Document number: DS15005 Rev. 10 - 2  
1234

中文翻译

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RS3DB-13-F 替代型号

型号 品牌 替代类型 描述 数据表
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