Datasheet > RS1004FL-T1

RS1004FL-T1

更新时间： 2024-11-12 15:49:59

品牌	Logo	应用领域
WTE		光电二极管
页数	文件大小	规格书
4页	40K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,

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RS1004FL-T1 数据手册

RS1000FL – RS1010FL

1.0A SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE

WON-TOP ELECTRONICS

Features



Low Profile 1.08mm Max. Case Height



Glass Passivated Die Construction

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 30A Peak

Fast Recovery Time

Ideally Suited for Automatic Assembly

Plastic Material – UL Recognition Flammability

Classification 94V-0

SOD-123FL

Min

Dim

Max

3.70

2.95

1.95

1.35

0.20

1.08

0.80

3.30

2.60

1.65

0.75

0.10

Mechanical Data



0.98

0.50

Case: SOD-123FL, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

All Dimensions in mm



Polarity: Cathode Band

Weight: 0.017 grams (approx.)

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

1000FL 1001FL 1002FL 1004FL 1006FL 1008FL 1010FL

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

VR(RMS)

280

1.0

Average Rectified Output Current

@T_L= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

Forward Voltage

@I_F= 1.0A

VFM

IRM

1.3

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

300

µA

Reverse Recovery Time (Note 1)

t_rr

150

250

500

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Ambient (Note 4)

Thermal Resistance Junction to Lead (Note 3)

Thermal Resistance Junction to Lead (Note 4)

R^θJA

RθJA

RθJL

325

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on FR-4 P.C. Board with minimum recommended pad size.

4. Mounted on FR-4 P.C. Board with 700mm²copper pads.

Revision: September, 2012

www.wontop.com

12 3 4

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与RS1004FL-T1相关器件

型号	品牌	获取价格	描述	数据表
RS1004FL-T1-LF	WTE	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,
RS1004M	RECTRON	获取价格	SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes)
RS1004M-B	MCC	获取价格	暂无描述
RS1004M-B-HF	RECTRON	获取价格	10A, 400V, SILICON, BRIDGE RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, RS-1
RS1004M-BP	MCC	获取价格	Rectifier Diode,
RS1004M-C	RECTRON	获取价格	Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-10
RS1004M-C-HF	RECTRON	获取价格	暂无描述
RS1004M-C-LV	RECTRON	获取价格	Reverse Voltage Vr : 400 V;Forward Current Io : 10.0 A;Max Surge Current : 200 A;Forward V
RS1004M-HF-C	RECTRON	获取价格	Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIAN
RS1004MLS	RECTRON	获取价格	Reverse Voltage Vr : 400 V;Forward Current Io : 10.0 A;Max Surge Current : 150 A;Forward V

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