Datasheet > RQ1C065UN

RQ1C065UN

更新时间： 2024-10-03 09:44:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	329K
描述
1.5V Drive Nch MOSFET

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中文翻译

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数据手册

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RQ1C065UN 数据手册

1.5V Drive Nch MOSFET

RQ1C065UN

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

TSMT8

(8) (7) (6) (5)

Features

1) Low on-resistance.

(1) (2) (3) (4)

2) High power package(TSMT8).

3) Low voltage drive(1.5V drive).

Abbreviated symbol : VB

 Application

Switching

 Packaging specifications

 Inner circuit

(8)

(7)

(6)

(5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000



RQ1C065UN

∗2

(1) Source

(2) Source

(3) Source

(4) Gate

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

(5) Drain

(6) Drain

(7) Drain

(8) Drain

(1)

(2)

(3)

(4)

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Drain-source voltage

10

Gate-source voltage

Continuous

6.5

26

Drain current

Pulsed

I_DP

I_S

Continuous

Pulsed

Source current

(Body Diode)

I_SP

Power dissipation

P_D

1.5

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

*2 Each terminal mounted on a CERAMIC Board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

83.3

Unit

Channel to Ambient

C / W

* Each terminal mounted on a CERAMIC Board.

www.rohm.com

2010.06 - Rev.A

1/5

12 3 4 5 6

中文翻译

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