Datasheet > RN2408(TE85L,F)

RN2408(TE85L,F)

更新时间： 2024-11-13 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN2408(TE85L,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.78
Base Number Matches：	1

RN2408(TE85L,F) 数据手册

RN2407~RN2409

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2407, RN2408, RN2409

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors

z Simplified circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1407 to 1409

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2407

RN2408

RN2409

JEDEC

JEITA

TO-236MOD

SC-59

TOSHIBA

2-3F1A

Weight: 12mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2407 to RN2409

Collector-emitter voltage

Emitter-base voltage

RN2407

RN2408

RN2409

−6

−7

EBO

−15

Collector current

−100

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2407 to RN2409

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1985-05

2014-03-01

12 3 4 5 6

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