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RN1441_07 PDF预览

RN1441_07

更新时间: 2024-11-25 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关PC
页数 文件大小 规格书
9页 697K
描述
Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications

RN1441_07 数据手册

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RN1441RN1444  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1441,RN1442,RN1443,RN1444  
Muting And Switching Applications  
Unit in mm  
z High emitter-base voltage: V  
= 25V (min)  
EBO  
z High reverse h : reverse h  
= 150 (typ.) (V = 2V, I = 4mA)  
CE C  
FE  
FE  
z Low on resistance: R  
= 1(typ.) (I = 5mA)  
B
ON  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
Equivalent Circuit  
JEDEC  
TO-236MOD  
EIAJ  
SC-59  
TOSHIBA  
Weight: 0.012g  
2-3F1A  
Absolute Maximum Ratings (Ta = 25°C)  
Marking  
H
classification  
FE  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
Type No.  
A
B
V
CBO  
V
CEO  
V
EBO  
50  
20  
V
V
RN1441  
RN1442  
RN1443  
RN1444  
KA  
LA  
NA  
CA  
KB  
Collector-emitter voltage  
Emitter-base voltage  
LB  
NB  
CB  
25  
V
Collector current  
I
300  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
150  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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