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RN1442 PDF预览

RN1442

更新时间: 2024-09-23 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
9页 397K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1442 技术参数

生命周期:End Of Life零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.52
Is Samacsys:N最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:20 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
VCEsat-Max:0.1 VBase Number Matches:1

RN1442 数据手册

 浏览型号RN1442的Datasheet PDF文件第2页浏览型号RN1442的Datasheet PDF文件第3页浏览型号RN1442的Datasheet PDF文件第4页浏览型号RN1442的Datasheet PDF文件第5页浏览型号RN1442的Datasheet PDF文件第6页浏览型号RN1442的Datasheet PDF文件第7页 
                                                               
                                                               
RN1441~RN1444  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1441,RN1442,RN1443,RN1444  
Muting And Switching Applications  
Unit in mm  
l High emitter-base voltage: V  
EBO  
= 25V (min)  
l High reverse h : reverse h = 150 (typ.) (V  
= 2V, I = 4mA)  
C
FE  
FE  
CE  
l Low on resistance: R  
= 1(typ.) (I = 5mA)  
ON  
B
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
Equivalent Circuit  
JEDEC  
TO-236MOD  
EIAJ  
SC-59  
TOSHIBA  
Weight: 0.012g  
2-3F1A  
Maximum Ratings (Ta = 25°C)  
Marking  
H
classification  
FE  
A
Characteristic  
Symbol  
Rating  
Unit  
Type No.  
B
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CBO  
V
CEO  
V
EBO  
50  
20  
V
V
RN1441  
RN1442  
RN1443  
RN1444  
KA  
LA  
NA  
CA  
KB  
LB  
NB  
CB  
25  
V
I
300  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
150  
j
T
55~150  
stg  
1
2001-06-07  

与RN1442相关器件

型号 品牌 获取价格 描述 数据表
RN1442(TE85L) TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1442(TE85L2) TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1442(TE85R) TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1442(TE85R2) TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1442A ETC

获取价格

TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SC-59
RN1442-A TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP Ge
RN1442A(TE85L) TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1442A(TE85L2) TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1442A(TE85R) TOSHIBA

获取价格

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1442B ETC

获取价格

TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SC-59