Datasheet > RMB8M

RMB8M

更新时间： 2025-07-15 08:57:59

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
3页	498K
描述
Bridge Rectifier Diode,

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中文翻译

获取价格

数据手册

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RMB8M 数据手册

RMB2M - RMB10M

Glass Passivated Fast Recovery Bridge Rectifier

Reverse Voltage 200 to 1000 Volts Forward Current 0.5 Ampere

Features

◆ Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

◆ Glass passivated chip junctions

◆ Fast recovery, low switching loss

◆ High temperature soldering guaranteed:260°C/10 seconds

◆ Long pointed leads: 3.70mm-4.05mm

Mechanical Data

◆ Case:Molded plastic body over passivated junctions

◆ Terminals: plated leads solderable per MIL-STD-750,

Method 2026

Package: MBM

◆ Polarity:Polarity symbols marked on body

◆ Mounting Position: Any

◆ Weight:0.078 oz., 0.22g

Maximum Ratings & Electrical Characteristics

(T_A=25°C unless otherwise noted)

Parameter

Symbol

V_RRM

V_RMS

RMB2M

200

RMB4M

400

RMB6M

600

RMB8M RMB10M

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

800

560

800

1000

700

140

280

420

Maximum DC blocking voltage

Maximum Average forward output current

V_DC

200

400

600

1000

0.5⁽¹⁾

0.8⁽²⁾

I_F(AV)

(see Fig.1)

on glass-epoxy P.C.B

on aluminum substrate

Peak forward surge current 8.3 MS single HALF sine-wave

superimposed on rated load (JEDEC Method)

I_FSM

A²sec

Rating for fusig (t<8.3ms)

I²t

Maximum instantaneous forward voltage drop

per leg at 0.4A

V_F

1.30

Maximum DC reverse current at

rated DC blocking voltage per leg

T_A=25°C

I_R

µA

T_A=125°C

100

250

150

500

Trr

Maximum reverse recovery time at I_F=0.5A,I_R=1.0A,Irr=0.25A

R_θJA

R_θJL

85⁽¹⁾

70⁽²⁾

20⁽¹⁾

Typical thermal resistance per leg

°C/W

°C

Typical junction capacitance per at 4.0V,1.0MHz

Operating junction and storage temperature range

-55 to +150

J,T_STG

Notes: 1. On glass epoxy P.C.B. mounted on 0.05×0.05"(1.3×1.3mm) pads

2. On aluminum substrate P.C.B.whth an area of 0.8×0.8"（20×20mm）mounted on 0.05×0.05"(1.3×1.3mm) solder pad

1/3

12 3

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