Datasheet > RM4953

RM4953

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	330K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 5.1 A;Rds-on (typ) (mOhms) : 43 mOhms;Total Gate Charge (nQ) typ : 11 nQ;Maximum Power Dissipation (W) : 2.5 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 520 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM4953 数据手册

RM4953

P-Channel Enhancement Mode Power MOSFET

Description

The RM4953 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 4.5V. This device is suitable for use as a

load switch or in PWM applications.

Schematic diagram

General Features

ƽ V_DS= -30V,I_D= -5.1A

R_DS(ON)< 90mΩ @ V_GS=-4.5V

R_DS(ON)< 55mΩ @ V_GS=-10V

ƽ High Power and current handing capability

ƽ Lead free product is acquired

ƽ Surface Mount Package

Application

Marking and pin assignment

ƽ PWM applications

ƽ Load switch

ƽ Power management

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM4953V

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

4953

RM4953

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

-5.1

-20

Drain Current-Pulsed ^{(Note 1)}

I_DM

Maximum Power Dissipation

2.5

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=-250μA

V_DS=-24V,V_GS=0V

-30

-33

-1

μA

2020-08/15

REV:B

12 3 4 5 6 7

中文翻译

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