Datasheet > RM4A3P303L

RM4A3P303L

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	184K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 4.3 A;Rds-on (typ) (mOhms) : 90 mOhms;Total Gate Charge (nQ) typ : 14 nQ;Maximum Power Dissipation (W) : 1.5 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 700 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM4A3P303L 数据手册

RM4A3P303L

P-Channel Enhancement Mode Power MOSFET

Description

The RM4A3P303L uses advanced trench technology to provide

excellent R_DS(ON), This device is suitable for use as a load

switch or in PWM applications.

Schematic diagram

General Features

ƽ V_DS= -30V,I_D= -4.3A

R_DS(ON)< 90mΩ @ V_GS=-4.5V

R_DS(ON)<52mΩ @ V_GS=-10V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin Assignment

Application

ƽ PWM applications

ƽ Load switch

SOT-23-3L top view

Tape width

ƽ Power management

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

3407

RM4A3P303L

SOT23-3L

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

-4.3

I_D

I_DM

-20

Maximum Power Dissipation

1.5

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

_GS=0V I_D=-250μA

-30

-33

_DS=-24V,V_GS=0V

-1

μA

2022-11/15

REV:A

12 3 4 5 6 7

中文翻译

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